High density lithium niobate photonic integrated circuits

Abstract Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but are difficult to process via dry etch...

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Main Authors: Zihan Li, Rui Ning Wang, Grigory Lihachev, Junyin Zhang, Zelin Tan, Mikhail Churaev, Nikolai Kuznetsov, Anat Siddharth, Mohammad J. Bereyhi, Johann Riemensberger, Tobias J. Kippenberg
Format: Article
Language:English
Published: Nature Portfolio 2023-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-40502-8
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author Zihan Li
Rui Ning Wang
Grigory Lihachev
Junyin Zhang
Zelin Tan
Mikhail Churaev
Nikolai Kuznetsov
Anat Siddharth
Mohammad J. Bereyhi
Johann Riemensberger
Tobias J. Kippenberg
author_facet Zihan Li
Rui Ning Wang
Grigory Lihachev
Junyin Zhang
Zelin Tan
Mikhail Churaev
Nikolai Kuznetsov
Anat Siddharth
Mohammad J. Bereyhi
Johann Riemensberger
Tobias J. Kippenberg
author_sort Zihan Li
collection DOAJ
description Abstract Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but are difficult to process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is a superior material for the manufacturing of photonic integrated circuits based on ferroelectrics, specifically LiNbO3. Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss waveguides with losses as low as 4 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than one order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a III-V/LiNbO3 based laser with sub-kHz intrinsic linewidth and tuning rate of 0.7 PHz/s with excellent linearity and CMOS-compatible driving voltage. We also demonstrated a MZM modulator with a 1.73 cm length and a halfwave voltage of 1.94 V.
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spelling doaj.art-f18360736bff44a2985f0f82255ad1652023-11-20T10:04:35ZengNature PortfolioNature Communications2041-17232023-08-011411810.1038/s41467-023-40502-8High density lithium niobate photonic integrated circuitsZihan Li0Rui Ning Wang1Grigory Lihachev2Junyin Zhang3Zelin Tan4Mikhail Churaev5Nikolai Kuznetsov6Anat Siddharth7Mohammad J. Bereyhi8Johann Riemensberger9Tobias J. Kippenberg10Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Abstract Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but are difficult to process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is a superior material for the manufacturing of photonic integrated circuits based on ferroelectrics, specifically LiNbO3. Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss waveguides with losses as low as 4 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than one order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a III-V/LiNbO3 based laser with sub-kHz intrinsic linewidth and tuning rate of 0.7 PHz/s with excellent linearity and CMOS-compatible driving voltage. We also demonstrated a MZM modulator with a 1.73 cm length and a halfwave voltage of 1.94 V.https://doi.org/10.1038/s41467-023-40502-8
spellingShingle Zihan Li
Rui Ning Wang
Grigory Lihachev
Junyin Zhang
Zelin Tan
Mikhail Churaev
Nikolai Kuznetsov
Anat Siddharth
Mohammad J. Bereyhi
Johann Riemensberger
Tobias J. Kippenberg
High density lithium niobate photonic integrated circuits
Nature Communications
title High density lithium niobate photonic integrated circuits
title_full High density lithium niobate photonic integrated circuits
title_fullStr High density lithium niobate photonic integrated circuits
title_full_unstemmed High density lithium niobate photonic integrated circuits
title_short High density lithium niobate photonic integrated circuits
title_sort high density lithium niobate photonic integrated circuits
url https://doi.org/10.1038/s41467-023-40502-8
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