Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techni...

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Bibliographic Details
Main Authors: S. David, J. Roque, N. Rochat, N. Bernier, L. Piot, R. Alcotte, T. Cerba, M. Martin, J. Moeyaert, Y. Bogumilowizc, S. Arnaud, F. Bertin, F. Bassani, T. Baron
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4949761

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