Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods
Abstract In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high P O2. To address this challenge, we combine thermodyn...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2021-09-01
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| Series: | npj Computational Materials |
| Online Access: | https://doi.org/10.1038/s41524-021-00610-9 |
| _version_ | 1818993792790822912 |
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| author | Lu Guo Shun-Li Shang Neil Campbell Paul G. Evans Mark Rzchowski Zi-Kui Liu Chang-Beom Eom |
| author_facet | Lu Guo Shun-Li Shang Neil Campbell Paul G. Evans Mark Rzchowski Zi-Kui Liu Chang-Beom Eom |
| author_sort | Lu Guo |
| collection | DOAJ |
| description | Abstract In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high P O2. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr2Ir2O7 thin films is fettered by the inability to grow with P O2 on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr2Ir2O7. |
| first_indexed | 2024-12-20T20:47:41Z |
| format | Article |
| id | doaj.art-f1c00b0ff7004bca818d01a8491d5078 |
| institution | Directory Open Access Journal |
| issn | 2057-3960 |
| language | English |
| last_indexed | 2024-12-20T20:47:41Z |
| publishDate | 2021-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Computational Materials |
| spelling | doaj.art-f1c00b0ff7004bca818d01a8491d50782022-12-21T19:27:01ZengNature Portfolionpj Computational Materials2057-39602021-09-01711610.1038/s41524-021-00610-9Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methodsLu Guo0Shun-Li Shang1Neil Campbell2Paul G. Evans3Mark Rzchowski4Zi-Kui Liu5Chang-Beom Eom6Department of Materials Science and Engineering, University of Wisconsin-MadisonDepartment of Materials Science and Engineering, The Pennsylvania State UniversityDepartment of Physics, University of Wisconsin-MadisonDepartment of Materials Science and Engineering, University of Wisconsin-MadisonDepartment of Physics, University of Wisconsin-MadisonDepartment of Materials Science and Engineering, The Pennsylvania State UniversityDepartment of Materials Science and Engineering, University of Wisconsin-MadisonAbstract In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high P O2. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr2Ir2O7 thin films is fettered by the inability to grow with P O2 on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr2Ir2O7.https://doi.org/10.1038/s41524-021-00610-9 |
| spellingShingle | Lu Guo Shun-Li Shang Neil Campbell Paul G. Evans Mark Rzchowski Zi-Kui Liu Chang-Beom Eom Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods npj Computational Materials |
| title | Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods |
| title_full | Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods |
| title_fullStr | Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods |
| title_full_unstemmed | Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods |
| title_short | Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods |
| title_sort | searching for a route to synthesize in situ epitaxial pr2ir2o7 thin films with thermodynamic methods |
| url | https://doi.org/10.1038/s41524-021-00610-9 |
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