Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

The synthesis of nanometer‐thick (≈3 nm) gallium oxynitride (GaOxNy) layers with a variable stoichiometry is reported. The approach primarily exploits the liquid metal chemistry (LMC) technique and promises easier integration of 2D materials onto photonic devices compared to traditional top‐down and...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Panteha Pedram, Ali Zavabeti, Nitu Syed, Amine Slassi, Chung Kim Nguyen, Benjamin Fornacciari, Anne Lamirand, Jules Galipaud, Arrigo Calzolari, Régis Orobtchouk, Andreas Boes, Torben Daeneke, Sébastien Cueff, Arnan Mitchell, Christelle Monat
Aineistotyyppi: Artikkeli
Kieli:English
Julkaistu: Wiley-VCH 2024-03-01
Sarja:Advanced Photonics Research
Aiheet:
2D materials
gallium nitride
gallium oxide
liquid metal chemistry
Linkit:https://doi.org/10.1002/adpr.202300252

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