Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2017-07-01
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| Series: | ACS Omega |
| Online Access: | http://dx.doi.org/10.1021/acsomega.7b00509 |
| _version_ | 1818880962681896960 |
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| author | Yukuya Nagai Asahi Okawa Taisuke Minamide Kei Hasegawa Hisashi Sugime Suguru Noda |
| author_facet | Yukuya Nagai Asahi Okawa Taisuke Minamide Kei Hasegawa Hisashi Sugime Suguru Noda |
| author_sort | Yukuya Nagai |
| collection | DOAJ |
| first_indexed | 2024-12-19T14:54:18Z |
| format | Article |
| id | doaj.art-f20a7fcf4a1f488497d15b58715916b6 |
| institution | Directory Open Access Journal |
| issn | 2470-1343 |
| language | English |
| last_indexed | 2024-12-19T14:54:18Z |
| publishDate | 2017-07-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj.art-f20a7fcf4a1f488497d15b58715916b62022-12-21T20:16:46ZengAmerican Chemical SocietyACS Omega2470-13432017-07-01273354336210.1021/acsomega.7b00509Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality GrapheneYukuya Nagai0Asahi Okawa1Taisuke Minamide2Kei Hasegawa3Hisashi Sugime4Suguru Noda5†Department of Applied Chemistry, Waseda University, Tokyo, Japan†Department of Applied Chemistry, Waseda University, Tokyo, Japan†Department of Applied Chemistry, Waseda University, Tokyo, Japan†Department of Applied Chemistry, Waseda University, Tokyo, JapanWaseda Institute for Advanced Study, Waseda University, Tokyo, Japan†Department of Applied Chemistry, Waseda University, Tokyo, Japanhttp://dx.doi.org/10.1021/acsomega.7b00509 |
| spellingShingle | Yukuya Nagai Asahi Okawa Taisuke Minamide Kei Hasegawa Hisashi Sugime Suguru Noda Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene ACS Omega |
| title | Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene |
| title_full | Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene |
| title_fullStr | Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene |
| title_full_unstemmed | Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene |
| title_short | Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene |
| title_sort | ten second epitaxy of cu on repeatedly used sapphire for practical production of high quality graphene |
| url | http://dx.doi.org/10.1021/acsomega.7b00509 |
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