Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range
Black silicon properties are investigated in the wavelength range extending from 0.2 to 25 μm with a focus on the mid‐infrared (MIR). It is demonstrated that concurrently increasing the initial level of doping of bare silicon, with given limits, enables reaching even higher absorptance and higher sp...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-02-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202200223 |
| _version_ | 1797905296080764928 |
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| author | Sreyash Sarkar Ahmed A. Elsayed Yasser M. Sabry Frédéric Marty Jérémie Drévillon Xiaoyi Liu Zhongzhu Liang Elodie Richalot Philippe Basset Elyes Nefzaoui Tarik Bourouina |
| author_facet | Sreyash Sarkar Ahmed A. Elsayed Yasser M. Sabry Frédéric Marty Jérémie Drévillon Xiaoyi Liu Zhongzhu Liang Elodie Richalot Philippe Basset Elyes Nefzaoui Tarik Bourouina |
| author_sort | Sreyash Sarkar |
| collection | DOAJ |
| description | Black silicon properties are investigated in the wavelength range extending from 0.2 to 25 μm with a focus on the mid‐infrared (MIR). It is demonstrated that concurrently increasing the initial level of doping of bare silicon, with given limits, enables reaching even higher absorptance and higher spectral range. Unprecedented light absorptance levels are obtained on black silicon with up to 99.5% in the spectral range from 1 to 8 μm and above 90% until 20 μm, leading to ultrabroadband, ultrablack silicon surfaces. The synergetic effects of morphology and volume doping are elucidated; in particular, how the high aspect‐ratio of conical nanostructures plays a crucial role. The experimental findings are analyzed with numerical simulations involving plasmonic effects of highly doped silicon and supported by tomographic processing of microscopy images. Guidelines and corresponding manufacturing routes are provided by which ultrabroadband, ultrablack silicon surfaces can be obtained within minutes of plasma processing, with no need for further functionalization. With the scalable manufacturing involving solely pure silicon, the resulting ultrabroadband perfect absorbers should be of benefit for large‐scale deployment of radiative cooling devices, blackbody infrared light sources, and infrared radiation sensing. |
| first_indexed | 2024-04-10T10:02:55Z |
| format | Article |
| id | doaj.art-f24308d18efc4040ab7238b0c47a7227 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-04-10T10:02:55Z |
| publishDate | 2023-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-f24308d18efc4040ab7238b0c47a72272023-02-16T05:49:06ZengWiley-VCHAdvanced Photonics Research2699-92932023-02-0142n/an/a10.1002/adpr.202200223Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength RangeSreyash Sarkar0Ahmed A. Elsayed1Yasser M. Sabry2Frédéric Marty3Jérémie Drévillon4Xiaoyi Liu5Zhongzhu Liang6Elodie Richalot7Philippe Basset8Elyes Nefzaoui9Tarik Bourouina10Univ Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceElectronics and Electrical Communications Department Faculty of Engineering Ain Shams University Cairo 11517 EgyptUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceInstitut Pprime, CNRS Université de Poitiers ISAE-ENSMA Futuroscope Chasseneuil 86360 FranceUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceChangchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences Changchun Jilin 130033 ChinaUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceUniv Gustave Eiffel CNRS ESYCOM Marne la Vallée F77454 FranceBlack silicon properties are investigated in the wavelength range extending from 0.2 to 25 μm with a focus on the mid‐infrared (MIR). It is demonstrated that concurrently increasing the initial level of doping of bare silicon, with given limits, enables reaching even higher absorptance and higher spectral range. Unprecedented light absorptance levels are obtained on black silicon with up to 99.5% in the spectral range from 1 to 8 μm and above 90% until 20 μm, leading to ultrabroadband, ultrablack silicon surfaces. The synergetic effects of morphology and volume doping are elucidated; in particular, how the high aspect‐ratio of conical nanostructures plays a crucial role. The experimental findings are analyzed with numerical simulations involving plasmonic effects of highly doped silicon and supported by tomographic processing of microscopy images. Guidelines and corresponding manufacturing routes are provided by which ultrabroadband, ultrablack silicon surfaces can be obtained within minutes of plasma processing, with no need for further functionalization. With the scalable manufacturing involving solely pure silicon, the resulting ultrabroadband perfect absorbers should be of benefit for large‐scale deployment of radiative cooling devices, blackbody infrared light sources, and infrared radiation sensing.https://doi.org/10.1002/adpr.202200223conical nanostructurationshighly doped siliconmid-infrared metamaterialsperfect light absorbersultrablack siliconultrabroadband absorbers |
| spellingShingle | Sreyash Sarkar Ahmed A. Elsayed Yasser M. Sabry Frédéric Marty Jérémie Drévillon Xiaoyi Liu Zhongzhu Liang Elodie Richalot Philippe Basset Elyes Nefzaoui Tarik Bourouina Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range Advanced Photonics Research conical nanostructurations highly doped silicon mid-infrared metamaterials perfect light absorbers ultrablack silicon ultrabroadband absorbers |
| title | Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range |
| title_full | Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range |
| title_fullStr | Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range |
| title_full_unstemmed | Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range |
| title_short | Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range |
| title_sort | black silicon revisited as an ultrabroadband perfect infrared absorber over 20 μm wavelength range |
| topic | conical nanostructurations highly doped silicon mid-infrared metamaterials perfect light absorbers ultrablack silicon ultrabroadband absorbers |
| url | https://doi.org/10.1002/adpr.202200223 |
| work_keys_str_mv | AT sreyashsarkar blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT ahmedaelsayed blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT yassermsabry blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT fredericmarty blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT jeremiedrevillon blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT xiaoyiliu blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT zhongzhuliang blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT elodierichalot blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT philippebasset blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT elyesnefzaoui blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange AT tarikbourouina blacksiliconrevisitedasanultrabroadbandperfectinfraredabsorberover20mmwavelengthrange |