A curvature-corrected CMOS bandgap reference
This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the <i>V<sub>BE</sub>(T )</i>...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2003-01-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf |
| Summary: | This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the <i>V<sub>BE</sub>(T )</i> expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35<i>µ</i>m 3Metal/2Poly CMOS technology and the chip area is approximately 70<i>µ</i>m × 110<i>µ</i>m. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW. |
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| ISSN: | 1684-9965 1684-9973 |