A curvature-corrected CMOS bandgap reference
This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the <i>V<sub>BE</sub>(T )</i>...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2003-01-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf |
| _version_ | 1819155999610634240 |
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| author | O. Mitrea C. Popa A. M. Manolescu M. Glesner |
| author_facet | O. Mitrea C. Popa A. M. Manolescu M. Glesner |
| author_sort | O. Mitrea |
| collection | DOAJ |
| description | This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the <i>V<sub>BE</sub>(T )</i> expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35<i>µ</i>m 3Metal/2Poly CMOS technology and the chip area is approximately 70<i>µ</i>m × 110<i>µ</i>m. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW. |
| first_indexed | 2024-12-22T15:45:54Z |
| format | Article |
| id | doaj.art-f29bcd37133340ad94c54fa490704874 |
| institution | Directory Open Access Journal |
| issn | 1684-9965 1684-9973 |
| language | deu |
| last_indexed | 2024-12-22T15:45:54Z |
| publishDate | 2003-01-01 |
| publisher | Copernicus Publications |
| record_format | Article |
| series | Advances in Radio Science |
| spelling | doaj.art-f29bcd37133340ad94c54fa4907048742022-12-21T18:21:01ZdeuCopernicus PublicationsAdvances in Radio Science1684-99651684-99732003-01-011181184A curvature-corrected CMOS bandgap referenceO. MitreaC. PopaA. M. ManolescuM. GlesnerThis paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the <i>V<sub>BE</sub>(T )</i> expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35<i>µ</i>m 3Metal/2Poly CMOS technology and the chip area is approximately 70<i>µ</i>m × 110<i>µ</i>m. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf |
| spellingShingle | O. Mitrea C. Popa A. M. Manolescu M. Glesner A curvature-corrected CMOS bandgap reference Advances in Radio Science |
| title | A curvature-corrected CMOS bandgap reference |
| title_full | A curvature-corrected CMOS bandgap reference |
| title_fullStr | A curvature-corrected CMOS bandgap reference |
| title_full_unstemmed | A curvature-corrected CMOS bandgap reference |
| title_short | A curvature-corrected CMOS bandgap reference |
| title_sort | curvature corrected cmos bandgap reference |
| url | http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf |
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