Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy
Development of L10 FePd thin films with large bulk perpendicular magnetic anisotropy and a low damping constant may permit superior scaling of next-generation ultra-high density magnetic memory elements. The buffer layer influences the L10-order parameter, static and dynamic magnetic properties of F...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0033287 |
| _version_ | 1828909435391574016 |
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| author | Xinjun Wang Sergiy Krylyuk Daniel Josell Delin Zhang Deyuan Lyu Jian-Ping Wang Daniel B. Gopman |
| author_facet | Xinjun Wang Sergiy Krylyuk Daniel Josell Delin Zhang Deyuan Lyu Jian-Ping Wang Daniel B. Gopman |
| author_sort | Xinjun Wang |
| collection | DOAJ |
| description | Development of L10 FePd thin films with large bulk perpendicular magnetic anisotropy and a low damping constant may permit superior scaling of next-generation ultra-high density magnetic memory elements. The buffer layer influences the L10-order parameter, static and dynamic magnetic properties of FePd and demands consideration for the design of high anisotropy strength and low damping films. In this report, we systematically investigate the perpendicular magnetic anisotropy and damping constant of the FePd thin films engineered through the Cr/(Pt, Ru, Ir, Rh), Mo/Ir, and Ir buffer layers. We observed that the Ir(001), Cr(001)/Ir(001), Cr(001)/Pt(001), Cr(001)/Rh(001), and Cr(001)/Ru(001) buffer layers can induce highly oriented (001) FePd films while the Mo/Ir buffer layer does not. Of all the buffer layers, the largest perpendicular magnetic anisotropy Ku ∼ 1.2 MJ/m3 and damping constant α ∼ 0.005 were achieved for the Cr/Pt buffered FePd sample, consistent with a high ordering parameter S ∼ 0.82. The Cr/Ru buffered FePd sample shows the lowest α ∼ 0.008, despite having a lower S ∼ 0.64 and a lower Ku ∼ 0.9 MJ/m3. These film-level properties would be sufficient for the engineering of devices that require thermally stable, sub-10 nm lateral size elements with low damping for applications of low energy-delay magnetic memory devices. |
| first_indexed | 2024-12-13T18:28:04Z |
| format | Article |
| id | doaj.art-f30333d66ed0450f80480be5412784ce |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T18:28:04Z |
| publishDate | 2021-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f30333d66ed0450f80480be5412784ce2022-12-21T23:35:34ZengAIP Publishing LLCAIP Advances2158-32262021-02-01112025106025106-610.1063/5.0033287Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropyXinjun Wang0Sergiy Krylyuk1Daniel Josell2Delin Zhang3Deyuan Lyu4Jian-Ping Wang5Daniel B. Gopman6Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USAMaterials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USAMaterials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USADepartment of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USADepartment of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USADepartment of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USAMaterials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USADevelopment of L10 FePd thin films with large bulk perpendicular magnetic anisotropy and a low damping constant may permit superior scaling of next-generation ultra-high density magnetic memory elements. The buffer layer influences the L10-order parameter, static and dynamic magnetic properties of FePd and demands consideration for the design of high anisotropy strength and low damping films. In this report, we systematically investigate the perpendicular magnetic anisotropy and damping constant of the FePd thin films engineered through the Cr/(Pt, Ru, Ir, Rh), Mo/Ir, and Ir buffer layers. We observed that the Ir(001), Cr(001)/Ir(001), Cr(001)/Pt(001), Cr(001)/Rh(001), and Cr(001)/Ru(001) buffer layers can induce highly oriented (001) FePd films while the Mo/Ir buffer layer does not. Of all the buffer layers, the largest perpendicular magnetic anisotropy Ku ∼ 1.2 MJ/m3 and damping constant α ∼ 0.005 were achieved for the Cr/Pt buffered FePd sample, consistent with a high ordering parameter S ∼ 0.82. The Cr/Ru buffered FePd sample shows the lowest α ∼ 0.008, despite having a lower S ∼ 0.64 and a lower Ku ∼ 0.9 MJ/m3. These film-level properties would be sufficient for the engineering of devices that require thermally stable, sub-10 nm lateral size elements with low damping for applications of low energy-delay magnetic memory devices.http://dx.doi.org/10.1063/5.0033287 |
| spellingShingle | Xinjun Wang Sergiy Krylyuk Daniel Josell Delin Zhang Deyuan Lyu Jian-Ping Wang Daniel B. Gopman Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy AIP Advances |
| title | Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy |
| title_full | Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy |
| title_fullStr | Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy |
| title_full_unstemmed | Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy |
| title_short | Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy |
| title_sort | buffer layer engineering of l10 fepd thin films with large perpendicular magnetic anisotropy |
| url | http://dx.doi.org/10.1063/5.0033287 |
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