Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots
We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal...
Main Authors: | J I Climente, C Segarra, J Planelles |
---|---|
Format: | Article |
Language: | English |
Published: |
IOP Publishing
2013-01-01
|
Series: | New Journal of Physics |
Online Access: | https://doi.org/10.1088/1367-2630/15/9/093009 |
Similar Items
-
Anisotropy of spin–orbit induced electron spin relaxation in [001] and [111] grown GaAs quantum dots
by: C Segarra, et al.
Published: (2015-01-01) -
Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
by: Leon C. Camenzind, et al.
Published: (2018-08-01) -
Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot
by: Peter Millington-Hotze, et al.
Published: (2023-05-01) -
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars
by: Thomas Riedl, et al.
Published: (2022-04-01) -
Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots
by: Worasak SUKKABOT
Published: (2013-12-01)