Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2559-5 |
| _version_ | 1827843061587116032 |
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| author | Siyu Cao Yue Zhao Sajid ur Rehman Shuai Feng Yuhua Zuo Chuanbo Li Lichun Zhang Buwen Cheng Qiming Wang |
| author_facet | Siyu Cao Yue Zhao Sajid ur Rehman Shuai Feng Yuhua Zuo Chuanbo Li Lichun Zhang Buwen Cheng Qiming Wang |
| author_sort | Siyu Cao |
| collection | DOAJ |
| description | Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate (G btt ) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor (M n ) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well. |
| first_indexed | 2024-03-12T08:19:20Z |
| format | Article |
| id | doaj.art-f358fcd11a3f47518440d40bad2e8190 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:19:20Z |
| publishDate | 2018-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-f358fcd11a3f47518440d40bad2e81902023-09-02T18:36:37ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-05-0113111510.1186/s11671-018-2559-5Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche PhotodiodesSiyu Cao0Yue Zhao1Sajid ur Rehman2Shuai Feng3Yuhua Zuo4Chuanbo Li5Lichun Zhang6Buwen Cheng7Qiming Wang8State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesSchool of Science, Minzu University of ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesSchool of Science, Minzu University of ChinaSchool of Physics and Optoelectronic Engineering, Ludong UniversityState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesAbstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate (G btt ) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor (M n ) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well.http://link.springer.com/article/10.1186/s11671-018-2559-5Avalanche photodiodesTheoretical analysisSimulationCharge layerTunneling effect |
| spellingShingle | Siyu Cao Yue Zhao Sajid ur Rehman Shuai Feng Yuhua Zuo Chuanbo Li Lichun Zhang Buwen Cheng Qiming Wang Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes Nanoscale Research Letters Avalanche photodiodes Theoretical analysis Simulation Charge layer Tunneling effect |
| title | Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes |
| title_full | Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes |
| title_fullStr | Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes |
| title_full_unstemmed | Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes |
| title_short | Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes |
| title_sort | theoretical studies on ingaas inalas sagcm avalanche photodiodes |
| topic | Avalanche photodiodes Theoretical analysis Simulation Charge layer Tunneling effect |
| url | http://link.springer.com/article/10.1186/s11671-018-2559-5 |
| work_keys_str_mv | AT siyucao theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT yuezhao theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT sajidurrehman theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT shuaifeng theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT yuhuazuo theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT chuanboli theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT lichunzhang theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT buwencheng theoreticalstudiesoningaasinalassagcmavalanchephotodiodes AT qimingwang theoreticalstudiesoningaasinalassagcmavalanchephotodiodes |