Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with la...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4898150 |
| Summary: | Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices. |
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| ISSN: | 2158-3226 |