Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with la...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4898150 |
| _version_ | 1819118782420877312 |
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| author | M. H. Lee Y.-T. Wei J.-C. Lin C.-W. Chen W.-H. Tu M. Tang |
| author_facet | M. H. Lee Y.-T. Wei J.-C. Lin C.-W. Chen W.-H. Tu M. Tang |
| author_sort | M. H. Lee |
| collection | DOAJ |
| description | Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices. |
| first_indexed | 2024-12-22T05:54:21Z |
| format | Article |
| id | doaj.art-f372433118324acc889ec8de2c35c8ee |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T05:54:21Z |
| publishDate | 2014-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f372433118324acc889ec8de2c35c8ee2022-12-21T18:36:46ZengAIP Publishing LLCAIP Advances2158-32262014-10-01410107117107117-610.1063/1.4898150019410ADVFerroelectric gate tunnel field-effect transistors with low-power steep turn-onM. H. Lee0Y.-T. Wei1J.-C. Lin2C.-W. Chen3W.-H. Tu4M. Tang5Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, TaiwanInstitute of Microelectronics, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanDevice Design Division, PTEK Technology Co., Ltd, Hsinchu, TaiwanUsing a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.http://dx.doi.org/10.1063/1.4898150 |
| spellingShingle | M. H. Lee Y.-T. Wei J.-C. Lin C.-W. Chen W.-H. Tu M. Tang Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on AIP Advances |
| title | Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on |
| title_full | Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on |
| title_fullStr | Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on |
| title_full_unstemmed | Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on |
| title_short | Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on |
| title_sort | ferroelectric gate tunnel field effect transistors with low power steep turn on |
| url | http://dx.doi.org/10.1063/1.4898150 |
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