Time-Domain Analysis of Chalcogenide Threshold Switching: From ns to ps Scale
A space- and time-dependent theoretical model based on a trap-assisted, charge-transport framework for the amorphous phase of a chalcogenide material is used here to interpret available experimental results for the electric current of nanoscale devices in the ns–ps time domain. A numerical solution...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2022-04-01
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| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2022.854393/full |
| Summary: | A space- and time-dependent theoretical model based on a trap-assisted, charge-transport framework for the amorphous phase of a chalcogenide material is used here to interpret available experimental results for the electric current of nanoscale devices in the ns–ps time domain. A numerical solution of the constitutive equations of the model for a time-dependent bias has been carried out for GST-225 devices. The “intrinsic” rise time of the device current after the application of a suitable external bias is controlled by the microscopic relaxation of the mobile-carrier population to the steady-state value. Furthermore, the analysis is extended to include the effect of the external circuit on the electrical switching. A quantitative estimate of the current delay time due to unavoidable parasitic effects is made for the optimised electrical set up configurations recently used by experimental groups. |
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| ISSN: | 2296-424X |