Time-Domain Analysis of Chalcogenide Threshold Switching: From ns to ps Scale

Time-Domain Analysis of Chalcogenide Threshold Switching: From ns to ps Scale

A space- and time-dependent theoretical model based on a trap-assisted, charge-transport framework for the amorphous phase of a chalcogenide material is used here to interpret available experimental results for the electric current of nanoscale devices in the ns–ps time domain. A numerical solution...

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Bibliographic Details
Main Authors: R. Brunetti, C. Jacoboni, E. Piccinini, M. Rudan
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-04-01
Series:Frontiers in Physics
Subjects:
chalcogenides
GST
ovonic threshold switching
phase change memories
charge transport
amorphous materials
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2022.854393/full

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