Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method
Four different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After depositi...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2014-09-01
|
| Series: | High Temperature Materials and Processes |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/htmp-2013-0059 |
| _version_ | 1818690003146899456 |
|---|---|
| author | Jonas Stanisława Konefał-Góral Jadwiga Małek Anna Kluska Stanisława Grzesik Zbigniew |
| author_facet | Jonas Stanisława Konefał-Góral Jadwiga Małek Anna Kluska Stanisława Grzesik Zbigniew |
| author_sort | Jonas Stanisława |
| collection | DOAJ |
| description | Four different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After deposition the structure and chemical composition of modified surfaces have been analyzed with use of SEM/EDS technique. Based on these results and thermodynamic calculations, the diffusion coefficients, D, for nitrogen and carbon in alloy were discussed. Scratch test shown that silicon carbonitride layers have good adhesion to metal surface. In order to determine atomic structure of obtained layers, FTIR spectra for layer-(001)Si and layer-Ti6Al4V were registered. |
| first_indexed | 2024-12-17T12:19:05Z |
| format | Article |
| id | doaj.art-f3bee92911ed40bb933121e4b09f68ff |
| institution | Directory Open Access Journal |
| issn | 0334-6455 2191-0324 |
| language | English |
| last_indexed | 2024-12-17T12:19:05Z |
| publishDate | 2014-09-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | High Temperature Materials and Processes |
| spelling | doaj.art-f3bee92911ed40bb933121e4b09f68ff2022-12-21T21:49:03ZengDe GruyterHigh Temperature Materials and Processes0334-64552191-03242014-09-0133539139810.1515/htmp-2013-0059Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD MethodJonas Stanisława0Konefał-Góral Jadwiga1Małek Anna2Kluska Stanisława3Grzesik Zbigniew4Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Krakow 30-059, PolandFaculty of Materials Science and Ceramics, AGH University of Science and Technology, Krakow 30-059, PolandFaculty of Materials Science and Ceramics, AGH University of Science and Technology, Krakow 30-059, PolandFaculty of Materials Science and Ceramics, AGH University of Science and Technology, Krakow 30-059, PolandFaculty of Materials Science and Ceramics, AGH University of Science and Technology, Krakow 30-059, PolandFour different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After deposition the structure and chemical composition of modified surfaces have been analyzed with use of SEM/EDS technique. Based on these results and thermodynamic calculations, the diffusion coefficients, D, for nitrogen and carbon in alloy were discussed. Scratch test shown that silicon carbonitride layers have good adhesion to metal surface. In order to determine atomic structure of obtained layers, FTIR spectra for layer-(001)Si and layer-Ti6Al4V were registered.https://doi.org/10.1515/htmp-2013-0059sicxny(h) layerspacvd methodti6al4vscratch test81.15.gh |
| spellingShingle | Jonas Stanisława Konefał-Góral Jadwiga Małek Anna Kluska Stanisława Grzesik Zbigniew Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method High Temperature Materials and Processes sicxny(h) layers pacvd method ti6al4v scratch test 81.15.gh |
| title | Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method |
| title_full | Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method |
| title_fullStr | Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method |
| title_full_unstemmed | Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method |
| title_short | Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method |
| title_sort | surface modification of the ti6al4v alloy with silicon carbonitride layer deposited by pacvd method |
| topic | sicxny(h) layers pacvd method ti6al4v scratch test 81.15.gh |
| url | https://doi.org/10.1515/htmp-2013-0059 |
| work_keys_str_mv | AT jonasstanisława surfacemodificationoftheti6al4valloywithsiliconcarbonitridelayerdepositedbypacvdmethod AT konefałgoraljadwiga surfacemodificationoftheti6al4valloywithsiliconcarbonitridelayerdepositedbypacvdmethod AT małekanna surfacemodificationoftheti6al4valloywithsiliconcarbonitridelayerdepositedbypacvdmethod AT kluskastanisława surfacemodificationoftheti6al4valloywithsiliconcarbonitridelayerdepositedbypacvdmethod AT grzesikzbigniew surfacemodificationoftheti6al4valloywithsiliconcarbonitridelayerdepositedbypacvdmethod |