Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias
SiC MOSFETs devices with double-trench dominate the market due to their low on-resistance. However, studies on its temperature-dependent properties are not comprehensive. This work uses fast I-V and static I-V techniques to explore the location of electrons trapped in the device under moderate gate...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9913635/ |