Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias

Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias

SiC MOSFETs devices with double-trench dominate the market due to their low on-resistance. However, studies on its temperature-dependent properties are not comprehensive. This work uses fast I-V and static I-V techniques to explore the location of electrons trapped in the device under moderate gate...

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Bibliographic Details
Main Authors: Ye Liang, Yuanlei Zhang, Jingqun Zhang, Xiuyuan He, Yinchao Zhao, Miao Cui, Huiqing Wen, Mingxiang Wang, Wen Liu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Activation energy
fast I-V technique
MOSFETs
on-resistance degradation
positive-bias stress
silicon carbide
Online Access:https://ieeexplore.ieee.org/document/9913635/

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