Isolation of Responsive Elements of Planar Multi-Element Photodiodes
In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is to study the causes of insulation resistance...
Main Author: | Mykola S. Kukurudziak |
---|---|
Format: | Article |
Language: | English |
Published: |
V.N. Karazin Kharkiv National University Publishing
2023-09-01
|
Series: | East European Journal of Physics |
Subjects: | |
Online Access: | https://periodicals.karazin.ua/eejp/article/view/22026 |
Similar Items
-
Silicon four element p-i-n photodiode with improved characteristics
by: Mykola Kukurudziak
Published: (2023-03-01) -
Silicon p-i-n photodiode with increased pulse sensitivity
by: Kukurudziak M. S., et al.
Published: (2021-04-01) -
Problems of Masking and Anti-Reflective SiO2 in Silicon Technology
by: Mykola S. Kukurudziak
Published: (2023-06-01) -
High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
by: Kukurudziak M. S., et al.
Published: (2020-12-01) -
Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes
by: Mykola S. Kukurudziak, et al.
Published: (2024-03-01)