Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe<sub>2</sub>/p-MoTe<sub>2</sub>) photodetector for high-performance photodetection in the broadband spectral range of 405–200...
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MDPI AG
2022-08-01
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author | Zhitao Lin Wenbiao Zhu Yonghong Zeng Yiqing Shu Haiguo Hu Weicheng Chen Jianqing Li |
author_facet | Zhitao Lin Wenbiao Zhu Yonghong Zeng Yiqing Shu Haiguo Hu Weicheng Chen Jianqing Li |
author_sort | Zhitao Lin |
collection | DOAJ |
description | Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe<sub>2</sub>/p-MoTe<sub>2</sub>) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe<sub>2</sub>/MoTe<sub>2</sub> heterojunction, the rectification ratio (RR) of ~10<sup>2</sup> at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 10<sup>11</sup> Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection. |
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spelling | doaj.art-f3d8df8d101e4d65bfb734850eba1ed52023-11-30T22:42:55ZengMDPI AGNanomaterials2079-49912022-08-011215266410.3390/nano12152664Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals HeterostructureZhitao Lin0Wenbiao Zhu1Yonghong Zeng2Yiqing Shu3Haiguo Hu4Weicheng Chen5Jianqing Li6School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaGuangdong-HongKong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, ChinaType II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe<sub>2</sub>/p-MoTe<sub>2</sub>) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe<sub>2</sub>/MoTe<sub>2</sub> heterojunction, the rectification ratio (RR) of ~10<sup>2</sup> at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 10<sup>11</sup> Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.https://www.mdpi.com/2079-4991/12/15/2664broadbandheterostructureinterlayer transitionshortwave infraredphotodetector |
spellingShingle | Zhitao Lin Wenbiao Zhu Yonghong Zeng Yiqing Shu Haiguo Hu Weicheng Chen Jianqing Li Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure Nanomaterials broadband heterostructure interlayer transition shortwave infrared photodetector |
title | Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure |
title_full | Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure |
title_fullStr | Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure |
title_full_unstemmed | Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure |
title_short | Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure |
title_sort | enhanced photodetection range from visible to shortwave infrared light by rese sub 2 sub mote sub 2 sub van der waals heterostructure |
topic | broadband heterostructure interlayer transition shortwave infrared photodetector |
url | https://www.mdpi.com/2079-4991/12/15/2664 |
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