Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability

We have developed a simple method of fabricating liquid metal nanowire (NW) arrays of eutectic GaIn (EGaIn). When an EGaIn droplet anchored on a flat substrate is pulled perpendicular to the substrate surface at room temperature, an hourglass shaped EGaIn is formed. At the neck of the shape, based o...

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Main Authors: Takashi Ikuno, Zen Somei
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Molecules
Subjects:
Online Access:https://www.mdpi.com/1420-3049/26/15/4616
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author Takashi Ikuno
Zen Somei
author_facet Takashi Ikuno
Zen Somei
author_sort Takashi Ikuno
collection DOAJ
description We have developed a simple method of fabricating liquid metal nanowire (NW) arrays of eutectic GaIn (EGaIn). When an EGaIn droplet anchored on a flat substrate is pulled perpendicular to the substrate surface at room temperature, an hourglass shaped EGaIn is formed. At the neck of the shape, based on the Plateau–Rayleigh instability, the EGaIn bridge with periodically varying thicknesses is formed. Finally, the bridge is broken down by additional pulling. Then, EGaIn NW is formed at the surface of the breakpoint. In addition, EGaIn NW arrays are found to be fabricated by pulling multiple EGaIn droplets on a substrate simultaneously. The average diameter of the obtained NW was approximately 0.6 μm and the length of the NW depended on the amount of droplet anchored on the substrate. The EGaIn NWs fabricated in this study may be used for three-dimensional wiring for integrated circuits, the tips of scanning probe microscopes, and field electron emission arrays.
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spelling doaj.art-f3f29af6658048569fcb0865c9c93c072023-11-22T06:00:45ZengMDPI AGMolecules1420-30492021-07-012615461610.3390/molecules26154616Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh InstabilityTakashi Ikuno0Zen Somei1Tokyo University of Science, Katsushika, Tokyo 125-8585, JapanTokyo University of Science, Katsushika, Tokyo 125-8585, JapanWe have developed a simple method of fabricating liquid metal nanowire (NW) arrays of eutectic GaIn (EGaIn). When an EGaIn droplet anchored on a flat substrate is pulled perpendicular to the substrate surface at room temperature, an hourglass shaped EGaIn is formed. At the neck of the shape, based on the Plateau–Rayleigh instability, the EGaIn bridge with periodically varying thicknesses is formed. Finally, the bridge is broken down by additional pulling. Then, EGaIn NW is formed at the surface of the breakpoint. In addition, EGaIn NW arrays are found to be fabricated by pulling multiple EGaIn droplets on a substrate simultaneously. The average diameter of the obtained NW was approximately 0.6 μm and the length of the NW depended on the amount of droplet anchored on the substrate. The EGaIn NWs fabricated in this study may be used for three-dimensional wiring for integrated circuits, the tips of scanning probe microscopes, and field electron emission arrays.https://www.mdpi.com/1420-3049/26/15/4616nanowireliquid metal
spellingShingle Takashi Ikuno
Zen Somei
Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
Molecules
nanowire
liquid metal
title Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
title_full Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
title_fullStr Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
title_full_unstemmed Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
title_short Fabrication of Eutectic Ga-In Nanowire Arrays Based on Plateau–Rayleigh Instability
title_sort fabrication of eutectic ga in nanowire arrays based on plateau rayleigh instability
topic nanowire
liquid metal
url https://www.mdpi.com/1420-3049/26/15/4616
work_keys_str_mv AT takashiikuno fabricationofeutecticgainnanowirearraysbasedonplateaurayleighinstability
AT zensomei fabricationofeutecticgainnanowirearraysbasedonplateaurayleighinstability