Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling

In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”)...

Full description

Bibliographic Details
Main Author: Nadine Collaert
Format: Article
Language:English
Published: MDPI AG 2016-06-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Online Access:http://www.mdpi.com/2079-9268/6/2/9
_version_ 1811263728999464960
author Nadine Collaert
author_facet Nadine Collaert
author_sort Nadine Collaert
collection DOAJ
description In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”) and functional scaling to enhance on-chip functionality (“more than Moore”).
first_indexed 2024-04-12T19:50:24Z
format Article
id doaj.art-f4488b04e2044aa087457cc942fa9709
institution Directory Open Access Journal
issn 2079-9268
language English
last_indexed 2024-04-12T19:50:24Z
publishDate 2016-06-01
publisher MDPI AG
record_format Article
series Journal of Low Power Electronics and Applications
spelling doaj.art-f4488b04e2044aa087457cc942fa97092022-12-22T03:18:51ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682016-06-0162910.3390/jlpea6020009jlpea6020009Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional ScalingNadine Collaert0Imec, Kapeldreef 75, 3001 Heverlee, BelgiumIn this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”) and functional scaling to enhance on-chip functionality (“more than Moore”).http://www.mdpi.com/2079-9268/6/2/9high mobility materialsIII-V(Si)GeCMOS
spellingShingle Nadine Collaert
Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
Journal of Low Power Electronics and Applications
high mobility materials
III-V
(Si)Ge
CMOS
title Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
title_full Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
title_fullStr Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
title_full_unstemmed Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
title_short Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
title_sort mastering the art of high mobility material integration on si a path towards power efficient cmos and functional scaling
topic high mobility materials
III-V
(Si)Ge
CMOS
url http://www.mdpi.com/2079-9268/6/2/9
work_keys_str_mv AT nadinecollaert masteringtheartofhighmobilitymaterialintegrationonsiapathtowardspowerefficientcmosandfunctionalscaling