Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”)...
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Format: | Article |
Language: | English |
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MDPI AG
2016-06-01
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Series: | Journal of Low Power Electronics and Applications |
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Online Access: | http://www.mdpi.com/2079-9268/6/2/9 |
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author | Nadine Collaert |
author_facet | Nadine Collaert |
author_sort | Nadine Collaert |
collection | DOAJ |
description | In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”) and functional scaling to enhance on-chip functionality (“more than Moore”). |
first_indexed | 2024-04-12T19:50:24Z |
format | Article |
id | doaj.art-f4488b04e2044aa087457cc942fa9709 |
institution | Directory Open Access Journal |
issn | 2079-9268 |
language | English |
last_indexed | 2024-04-12T19:50:24Z |
publishDate | 2016-06-01 |
publisher | MDPI AG |
record_format | Article |
series | Journal of Low Power Electronics and Applications |
spelling | doaj.art-f4488b04e2044aa087457cc942fa97092022-12-22T03:18:51ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682016-06-0162910.3390/jlpea6020009jlpea6020009Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional ScalingNadine Collaert0Imec, Kapeldreef 75, 3001 Heverlee, BelgiumIn this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”) and functional scaling to enhance on-chip functionality (“more than Moore”).http://www.mdpi.com/2079-9268/6/2/9high mobility materialsIII-V(Si)GeCMOS |
spellingShingle | Nadine Collaert Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling Journal of Low Power Electronics and Applications high mobility materials III-V (Si)Ge CMOS |
title | Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling |
title_full | Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling |
title_fullStr | Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling |
title_full_unstemmed | Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling |
title_short | Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling |
title_sort | mastering the art of high mobility material integration on si a path towards power efficient cmos and functional scaling |
topic | high mobility materials III-V (Si)Ge CMOS |
url | http://www.mdpi.com/2079-9268/6/2/9 |
work_keys_str_mv | AT nadinecollaert masteringtheartofhighmobilitymaterialintegrationonsiapathtowardspowerefficientcmosandfunctionalscaling |