Silicon four element p-i-n photodiode with improved characteristics
This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied. PDs with reduced gaps were modeled, samples were made accor...
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| Format: | Article |
| Language: | English |
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National Aerospace University «Kharkiv Aviation Institute»
2023-03-01
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| Series: | Радіоелектронні і комп'ютерні системи |
| Subjects: | |
| Online Access: | http://nti.khai.edu/ojs/index.php/reks/article/view/1924 |