Probing and passivating electron traps at the MAPbI3/TiO2 interface
We developed a test platform structure to probe interfacial charge transport/transfer at the methylammonium lead iodide (MAPbI3)/TiO2 interface, demonstrating that trap density in the MAPbI3 close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltag...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-04-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721001923 |
| _version_ | 1818329447793688576 |
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| author | Byoungnam Park |
| author_facet | Byoungnam Park |
| author_sort | Byoungnam Park |
| collection | DOAJ |
| description | We developed a test platform structure to probe interfacial charge transport/transfer at the methylammonium lead iodide (MAPbI3)/TiO2 interface, demonstrating that trap density in the MAPbI3 close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes. |
| first_indexed | 2024-12-13T12:48:13Z |
| format | Article |
| id | doaj.art-f472f641f2a24806892cef8ccdee3b7b |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-13T12:48:13Z |
| publishDate | 2021-04-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-f472f641f2a24806892cef8ccdee3b7b2022-12-21T23:45:25ZengElsevierResults in Physics2211-37972021-04-0123104025Probing and passivating electron traps at the MAPbI3/TiO2 interfaceByoungnam Park0Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Republic of KoreaWe developed a test platform structure to probe interfacial charge transport/transfer at the methylammonium lead iodide (MAPbI3)/TiO2 interface, demonstrating that trap density in the MAPbI3 close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes.http://www.sciencedirect.com/science/article/pii/S2211379721001923MAPbI3TiO2Charge transferField-effect transistor |
| spellingShingle | Byoungnam Park Probing and passivating electron traps at the MAPbI3/TiO2 interface Results in Physics MAPbI3 TiO2 Charge transfer Field-effect transistor |
| title | Probing and passivating electron traps at the MAPbI3/TiO2 interface |
| title_full | Probing and passivating electron traps at the MAPbI3/TiO2 interface |
| title_fullStr | Probing and passivating electron traps at the MAPbI3/TiO2 interface |
| title_full_unstemmed | Probing and passivating electron traps at the MAPbI3/TiO2 interface |
| title_short | Probing and passivating electron traps at the MAPbI3/TiO2 interface |
| title_sort | probing and passivating electron traps at the mapbi3 tio2 interface |
| topic | MAPbI3 TiO2 Charge transfer Field-effect transistor |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721001923 |
| work_keys_str_mv | AT byoungnampark probingandpassivatingelectrontrapsatthemapbi3tio2interface |