Effects of ion beams on flash memory cells
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degre...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VINCA Institute of Nuclear Sciences
2014-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941402116O.pdf |
| Summary: | This paper deals with the flash memory reliability in terms of the ionizing
radiation effects. In fact, the reliability of flash memory depends on
physico-chemical restrictions of electrostatic nature due to the effects of
ionizing radiation. The presented results are actual as a high degree of
integrated components miniaturization affects the memory sensitivity, while
the role of memories in the solar cells management system for space flights
is increasing, so that the effects of ionizing radiation may cause changes in
the stored data or the physical destruction of the flash memory components.
[Projekat Ministarstva nauke Republike Srbije, br.171007] |
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| ISSN: | 1451-3994 |