Effect of current density on the porous silicon preparation as gas sensors**
In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2021-11-01
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| Series: | Journal of the Mechanical Behavior of Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/jmbm-2021-0027 |
| _version_ | 1818393244535357440 |
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| author | Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib |
| author_facet | Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib |
| author_sort | Kareem Muna H. |
| collection | DOAJ |
| description | In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics. |
| first_indexed | 2024-12-14T05:42:14Z |
| format | Article |
| id | doaj.art-f49b1769dafa4643a4354243a7f6147c |
| institution | Directory Open Access Journal |
| issn | 0334-8938 2191-0243 |
| language | English |
| last_indexed | 2024-12-14T05:42:14Z |
| publishDate | 2021-11-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Journal of the Mechanical Behavior of Materials |
| spelling | doaj.art-f49b1769dafa4643a4354243a7f6147c2022-12-21T23:15:00ZengDe GruyterJournal of the Mechanical Behavior of Materials0334-89382191-02432021-11-0130125726410.1515/jmbm-2021-0027Effect of current density on the porous silicon preparation as gas sensors**Kareem Muna H.0Abdul Hussein Adi M.1Hussein Haitham Talib2Physics Sciences Branch, of Applied Science, University of Technology, Iraq, BaghdadPhysics Sciences Branch, of Applied Science, University of Technology, Iraq, BaghdadPhysics Sciences Branch, of Applied Science, University of Technology, Iraq, BaghdadIn this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.https://doi.org/10.1515/jmbm-2021-0027porous siliconproperties of porous silicongas sensoracetone gas |
| spellingShingle | Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib Effect of current density on the porous silicon preparation as gas sensors** Journal of the Mechanical Behavior of Materials porous silicon properties of porous silicon gas sensor acetone gas |
| title | Effect of current density on the porous silicon preparation as gas sensors** |
| title_full | Effect of current density on the porous silicon preparation as gas sensors** |
| title_fullStr | Effect of current density on the porous silicon preparation as gas sensors** |
| title_full_unstemmed | Effect of current density on the porous silicon preparation as gas sensors** |
| title_short | Effect of current density on the porous silicon preparation as gas sensors** |
| title_sort | effect of current density on the porous silicon preparation as gas sensors |
| topic | porous silicon properties of porous silicon gas sensor acetone gas |
| url | https://doi.org/10.1515/jmbm-2021-0027 |
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