Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable res...
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MDPI AG
2019-06-01
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| Seria: | Crystals |
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| Dostęp online: | https://www.mdpi.com/2073-4352/9/6/318 |
| _version_ | 1828117302136012800 |
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| author | Jian-Yang Lin Kuang-Yao Wu Kai-Huang Chen |
| author_facet | Jian-Yang Lin Kuang-Yao Wu Kai-Huang Chen |
| author_sort | Jian-Yang Lin |
| collection | DOAJ |
| description | In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (R<sub>HRS</sub>/R<sub>LRS</sub>) ratio of the RRAM device containing a V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> bilayer is one order of magnitude higher than that of the devices containing a single layer of V<sub>2</sub>O<sub>5</sub> or Sm<sub>2</sub>O<sub>3</sub>. We also found that the stacking sequence of the Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed. |
| first_indexed | 2024-04-11T13:12:04Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T13:12:04Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-f4a8ce9ee5ea45509a58d0e0809e2ab12022-12-22T04:22:33ZengMDPI AGCrystals2073-43522019-06-019631810.3390/cryst9060318cryst9060318Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access MemoriesJian-Yang Lin0Kuang-Yao Wu1Kai-Huang Chen2Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, TaiwanGraduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliou, Yunlin 640, TaiwanDepartment of Digital Game and Animation Design, Tung Fang Design University, No.110, Dongfang Rd., Hunei Dist., Kaohsiung City 82941, TaiwanIn this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (R<sub>HRS</sub>/R<sub>LRS</sub>) ratio of the RRAM device containing a V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> bilayer is one order of magnitude higher than that of the devices containing a single layer of V<sub>2</sub>O<sub>5</sub> or Sm<sub>2</sub>O<sub>3</sub>. We also found that the stacking sequence of the Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.https://www.mdpi.com/2073-4352/9/6/318resistive random access memory (RRAM)bipolar resistive switching behaviorthin filmselectrical conduction mechanism |
| spellingShingle | Jian-Yang Lin Kuang-Yao Wu Kai-Huang Chen Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories Crystals resistive random access memory (RRAM) bipolar resistive switching behavior thin films electrical conduction mechanism |
| title | Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories |
| title_full | Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories |
| title_fullStr | Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories |
| title_full_unstemmed | Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories |
| title_short | Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories |
| title_sort | effects of sm sub 2 sub o sub 3 sub and v sub 2 sub o sub 5 sub film stacking on switching behaviors of resistive random access memories |
| topic | resistive random access memory (RRAM) bipolar resistive switching behavior thin films electrical conduction mechanism |
| url | https://www.mdpi.com/2073-4352/9/6/318 |
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