Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer ai...

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Bibliographic Details
Main Authors:	Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan
Format:	Article
Language:	English
Published:	MDPI AG 2020-07-01
Series:	Sensors
Subjects:	Hall sensors FD-SOI CMOS radiation effects total ionizing dose transient dose rate single event transient
Online Access:	https://www.mdpi.com/1424-8220/20/14/3946

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