Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition
Abstract High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of pr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-10-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2329-9 |
| _version_ | 1797708568095358976 |
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| author | Pengyu Liu Tao Luo Jie Xing Hong Xu Huiying Hao Hao Liu Jingjing Dong |
| author_facet | Pengyu Liu Tao Luo Jie Xing Hong Xu Huiying Hao Hao Liu Jingjing Dong |
| author_sort | Pengyu Liu |
| collection | DOAJ |
| description | Abstract High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film. |
| first_indexed | 2024-03-12T06:23:30Z |
| format | Article |
| id | doaj.art-f4f47a13672c4dcb9e84ec66586f0c86 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:23:30Z |
| publishDate | 2017-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-f4f47a13672c4dcb9e84ec66586f0c862023-09-03T02:07:02ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-10-0112111010.1186/s11671-017-2329-9Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor DepositionPengyu Liu0Tao Luo1Jie Xing2Hong Xu3Huiying Hao4Hao Liu5Jingjing Dong6School of Science, China University of GeosciencesSchool of Science, China University of GeosciencesSchool of Science, China University of GeosciencesSchool of Science, China University of GeosciencesSchool of Science, China University of GeosciencesSchool of Science, China University of GeosciencesSchool of Science, China University of GeosciencesAbstract High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.http://link.springer.com/article/10.1186/s11671-017-2329-9Two-Dimensional MaterialsTungsten DisulfideChemical Vapor Deposition (CVD)Transition Metal Dichalcogenides (TMDCs) |
| spellingShingle | Pengyu Liu Tao Luo Jie Xing Hong Xu Huiying Hao Hao Liu Jingjing Dong Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition Nanoscale Research Letters Two-Dimensional Materials Tungsten Disulfide Chemical Vapor Deposition (CVD) Transition Metal Dichalcogenides (TMDCs) |
| title | Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition |
| title_full | Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition |
| title_fullStr | Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition |
| title_full_unstemmed | Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition |
| title_short | Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition |
| title_sort | large area ws2 film with big single domains grown by chemical vapor deposition |
| topic | Two-Dimensional Materials Tungsten Disulfide Chemical Vapor Deposition (CVD) Transition Metal Dichalcogenides (TMDCs) |
| url | http://link.springer.com/article/10.1186/s11671-017-2329-9 |
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