Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control
Abstract Driven by the need to address both the von Neumann bottleneck and scaling limits predicted by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in‐memory applications. While several field‐free spin–orbit torque (SOT)‐driven logic devices have been propos...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2020-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.201901090 |
| _version_ | 1797656155719204864 |
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| author | Gerard Joseph Lim Daniel Chua Weiliang Gan Chandrasekhar Murapaka Wen Siang Lew |
| author_facet | Gerard Joseph Lim Daniel Chua Weiliang Gan Chandrasekhar Murapaka Wen Siang Lew |
| author_sort | Gerard Joseph Lim |
| collection | DOAJ |
| description | Abstract Driven by the need to address both the von Neumann bottleneck and scaling limits predicted by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in‐memory applications. While several field‐free spin–orbit torque (SOT)‐driven logic devices have been proposed, their operation typically requires additional initialization or reset pulses, the exchange‐coupled canted spins reduce both anomalous Hall sign‐to‐noise ratio as well as thermal stability of the ferromagnetic layer, and device‐to‐device variation in exchange coupling strength is expected. A reconfigurable SOT‐driven logic device using a double Hall cross structure with an integrated bias field line for the generation of a local bias field is experimentally demonstrated. The on‐chip bipolar bias field can be toggled to flip the SOT‐induced switching chirality, and to assist with deterministic SOT magnetization switching, thereby enabling on‐the‐fly reconfigurability of the logic device to function as one of the several possible logic gates, e.g., AND, NOR, XNOR, XOR, NIMP, and converse NIMP. It is then shown through compact‐modeling and circuit simulation that the applications of such reconfigurable logic devices can be further expanded to build half‐adders. |
| first_indexed | 2024-03-11T17:25:17Z |
| format | Article |
| id | doaj.art-f4f5833d76e2435fa53e9b58052afd35 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T17:25:17Z |
| publishDate | 2020-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-f4f5833d76e2435fa53e9b58052afd352023-10-19T05:02:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2020-04-0164n/an/a10.1002/aelm.201901090Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality ControlGerard Joseph Lim0Daniel Chua1Weiliang Gan2Chandrasekhar Murapaka3Wen Siang Lew4School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 SingaporeSchool of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 SingaporeSchool of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 SingaporeSchool of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 SingaporeSchool of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 SingaporeAbstract Driven by the need to address both the von Neumann bottleneck and scaling limits predicted by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in‐memory applications. While several field‐free spin–orbit torque (SOT)‐driven logic devices have been proposed, their operation typically requires additional initialization or reset pulses, the exchange‐coupled canted spins reduce both anomalous Hall sign‐to‐noise ratio as well as thermal stability of the ferromagnetic layer, and device‐to‐device variation in exchange coupling strength is expected. A reconfigurable SOT‐driven logic device using a double Hall cross structure with an integrated bias field line for the generation of a local bias field is experimentally demonstrated. The on‐chip bipolar bias field can be toggled to flip the SOT‐induced switching chirality, and to assist with deterministic SOT magnetization switching, thereby enabling on‐the‐fly reconfigurability of the logic device to function as one of the several possible logic gates, e.g., AND, NOR, XNOR, XOR, NIMP, and converse NIMP. It is then shown through compact‐modeling and circuit simulation that the applications of such reconfigurable logic devices can be further expanded to build half‐adders.https://doi.org/10.1002/aelm.201901090Boolean logicreconfigurable logic devicesspin logicspin–orbit torquethreshold logic |
| spellingShingle | Gerard Joseph Lim Daniel Chua Weiliang Gan Chandrasekhar Murapaka Wen Siang Lew Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control Advanced Electronic Materials Boolean logic reconfigurable logic devices spin logic spin–orbit torque threshold logic |
| title | Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control |
| title_full | Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control |
| title_fullStr | Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control |
| title_full_unstemmed | Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control |
| title_short | Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control |
| title_sort | programmable spin orbit torque logic device with integrated bipolar bias field for chirality control |
| topic | Boolean logic reconfigurable logic devices spin logic spin–orbit torque threshold logic |
| url | https://doi.org/10.1002/aelm.201901090 |
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