Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications
The paper presents a design of a broadband high-efficiency class-E power amplifier (PA) for the advanced efficiency enhancement architectures applications. A sequential load pull methodology to design broadband class-E power amplifiers using a packaged gallium nitride power transistor is presented....
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8252919/ |
| _version_ | 1819171798208479232 |
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| author | Tushar Sharma Pouya Aflaki Mohamed Helaoui Fadhel M. Ghannouchi |
| author_facet | Tushar Sharma Pouya Aflaki Mohamed Helaoui Fadhel M. Ghannouchi |
| author_sort | Tushar Sharma |
| collection | DOAJ |
| description | The paper presents a design of a broadband high-efficiency class-E power amplifier (PA) for the advanced efficiency enhancement architectures applications. A sequential load pull methodology to design broadband class-E power amplifiers using a packaged gallium nitride power transistor is presented. Two different broadband matching synthesis techniques have been proposed using lumped elements have been presented and implemented in the manuscript. A fourth-order low-pass impedance transformation topology is designed as the output matching network to provide the optimum load reflection coefficients in the targeted bandwidth (1.8-2.7 GHz). A combination of input and output matching network has been proposed in the manuscript to satisfy the given fractional bandwidth requirements. For practical validation, a Wolfspeed (Cree) CGH40025 package transistor has been used. Under continuous wave test condition the fabricated PA showed more than 50% power added efficiency (PAE) with up to 29 W output power for 40% fractional bandwidth from 1.8-2.7 GHz. Furthermore, the proposed broadband Class E PA is deployed in efficiency enhancement architecture like delta-sigma modulation based transmitters. The PA shows more than 48% PAE all over the frequency band when driven with a delta-sigma modulated LTE downlink signal while maintaining high signal quality and PA reliability. |
| first_indexed | 2024-12-22T19:57:01Z |
| format | Article |
| id | doaj.art-f50c32c8d5aa4ab082704972d442ba18 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T19:57:01Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-f50c32c8d5aa4ab082704972d442ba182022-12-21T18:14:24ZengIEEEIEEE Access2169-35362018-01-0164709471910.1109/ACCESS.2017.27892488252919Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter ApplicationsTushar Sharma0https://orcid.org/0000-0001-5145-3518Pouya Aflaki1Mohamed Helaoui2Fadhel M. Ghannouchi3Department of Electrical and Computer Engineering, Intelligent RF radio Laboratory, Schulich School of Engineering, University of Calgary, Calgary, CanadaDepartment of Electrical and Computer Engineering, Intelligent RF radio Laboratory, Schulich School of Engineering, University of Calgary, Calgary, CanadaDepartment of Electrical and Computer Engineering, Intelligent RF radio Laboratory, Schulich School of Engineering, University of Calgary, Calgary, CanadaDepartment of Electrical and Computer Engineering, Intelligent RF radio Laboratory, Schulich School of Engineering, University of Calgary, Calgary, CanadaThe paper presents a design of a broadband high-efficiency class-E power amplifier (PA) for the advanced efficiency enhancement architectures applications. A sequential load pull methodology to design broadband class-E power amplifiers using a packaged gallium nitride power transistor is presented. Two different broadband matching synthesis techniques have been proposed using lumped elements have been presented and implemented in the manuscript. A fourth-order low-pass impedance transformation topology is designed as the output matching network to provide the optimum load reflection coefficients in the targeted bandwidth (1.8-2.7 GHz). A combination of input and output matching network has been proposed in the manuscript to satisfy the given fractional bandwidth requirements. For practical validation, a Wolfspeed (Cree) CGH40025 package transistor has been used. Under continuous wave test condition the fabricated PA showed more than 50% power added efficiency (PAE) with up to 29 W output power for 40% fractional bandwidth from 1.8-2.7 GHz. Furthermore, the proposed broadband Class E PA is deployed in efficiency enhancement architecture like delta-sigma modulation based transmitters. The PA shows more than 48% PAE all over the frequency band when driven with a delta-sigma modulated LTE downlink signal while maintaining high signal quality and PA reliability.https://ieeexplore.ieee.org/document/8252919/broadbandclass-Edelta-sigmagallium nitride (GaN)lumped elementmicrostrip |
| spellingShingle | Tushar Sharma Pouya Aflaki Mohamed Helaoui Fadhel M. Ghannouchi Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications IEEE Access broadband class-E delta-sigma gallium nitride (GaN) lumped element microstrip |
| title | Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications |
| title_full | Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications |
| title_fullStr | Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications |
| title_full_unstemmed | Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications |
| title_short | Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications |
| title_sort | broadband gan class e power amplifier for load modulated delta sigma and 5g transmitter applications |
| topic | broadband class-E delta-sigma gallium nitride (GaN) lumped element microstrip |
| url | https://ieeexplore.ieee.org/document/8252919/ |
| work_keys_str_mv | AT tusharsharma broadbandganclassepoweramplifierforloadmodulateddeltasigmaand5gtransmitterapplications AT pouyaaflaki broadbandganclassepoweramplifierforloadmodulateddeltasigmaand5gtransmitterapplications AT mohamedhelaoui broadbandganclassepoweramplifierforloadmodulateddeltasigmaand5gtransmitterapplications AT fadhelmghannouchi broadbandganclassepoweramplifierforloadmodulateddeltasigmaand5gtransmitterapplications |