Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt
Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si...
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MDPI AG
2021-02-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/5/1090 |
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| author | Maoqiang Rui Yaxiang Zhang Jing Ye |
| author_facet | Maoqiang Rui Yaxiang Zhang Jing Ye |
| author_sort | Maoqiang Rui |
| collection | DOAJ |
| description | Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si melt. The samples infiltrated with the Si-only melt were found to be very sensitive to experimental temperature. The bending strengths of 58.6 and 317.0 MPa were achieved at 1530 and 1570 °C, respectively. The sample made by infiltration of B–Si alloy was successfully sintered at 1530 °C. The relative density of the sample was more than 90%. The infiltration of B–Si alloy reduced the sintering temperature and the bending strength reached 326.9 MPa. The infiltration mechanism of B–Si alloy is discussed herein. |
| first_indexed | 2024-03-09T00:30:02Z |
| format | Article |
| id | doaj.art-f51f3645be1d4e478de50df8052b376e |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T00:30:02Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-f51f3645be1d4e478de50df8052b376e2023-12-11T18:36:20ZengMDPI AGMaterials1996-19442021-02-01145109010.3390/ma14051090Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon MeltMaoqiang Rui0Yaxiang Zhang1Jing Ye2School of Material Science and Engineering, Wuhan University of Technology, Wuhan 430070, ChinaSchool of Material Science and Engineering, Wuhan University of Technology, Wuhan 430070, ChinaSchool of Material Science and Engineering, Wuhan University of Technology, Wuhan 430070, ChinaReaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si melt. The samples infiltrated with the Si-only melt were found to be very sensitive to experimental temperature. The bending strengths of 58.6 and 317.0 MPa were achieved at 1530 and 1570 °C, respectively. The sample made by infiltration of B–Si alloy was successfully sintered at 1530 °C. The relative density of the sample was more than 90%. The infiltration of B–Si alloy reduced the sintering temperature and the bending strength reached 326.9 MPa. The infiltration mechanism of B–Si alloy is discussed herein.https://www.mdpi.com/1996-1944/14/5/1090reaction-bonded silicon carbideB–Si alloyinfiltration |
| spellingShingle | Maoqiang Rui Yaxiang Zhang Jing Ye Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt Materials reaction-bonded silicon carbide B–Si alloy infiltration |
| title | Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt |
| title_full | Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt |
| title_fullStr | Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt |
| title_full_unstemmed | Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt |
| title_short | Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt |
| title_sort | environment friendly preparation of reaction bonded silicon carbide by addition of boron in the silicon melt |
| topic | reaction-bonded silicon carbide B–Si alloy infiltration |
| url | https://www.mdpi.com/1996-1944/14/5/1090 |
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