Ion Beam Modification for Si Photonics
Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is review...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-03-01
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| Series: | Physics |
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| Online Access: | https://www.mdpi.com/2624-8174/4/2/25 |
| _version_ | 1797483234851815424 |
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| author | Lyudmila V. Goncharova Peter J. Simpson |
| author_facet | Lyudmila V. Goncharova Peter J. Simpson |
| author_sort | Lyudmila V. Goncharova |
| collection | DOAJ |
| description | Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is reviewed, with a focus on ion implantation as a synthetic tool. Light emissions from Si and Ge QDs are compared with emissions from other optically active centers, such as defects in silicon oxide and other thin film materials, as well as rare-earth light emitters. Detection of light in silicon photonics is performed via the integration of germanium and other elements into detector structures, which can also be achieved by ion implantation. Novel techniques to grow SiGe- and SiGeSn-on-Si structure are described along with their application as detectors for operation in the short-wave infrared range. |
| first_indexed | 2024-03-09T22:44:03Z |
| format | Article |
| id | doaj.art-f5261e2eb276464db95b845a5b641d74 |
| institution | Directory Open Access Journal |
| issn | 2624-8174 |
| language | English |
| last_indexed | 2024-03-09T22:44:03Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Physics |
| spelling | doaj.art-f5261e2eb276464db95b845a5b641d742023-11-23T18:33:40ZengMDPI AGPhysics2624-81742022-03-014238339310.3390/physics4020025Ion Beam Modification for Si PhotonicsLyudmila V. Goncharova0Peter J. Simpson1Department of Physics and Astronomy, Western University, London, ON N6A 3K7, CanadaDepartment of Physics and Astronomy, Western University, London, ON N6A 3K7, CanadaIon implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is reviewed, with a focus on ion implantation as a synthetic tool. Light emissions from Si and Ge QDs are compared with emissions from other optically active centers, such as defects in silicon oxide and other thin film materials, as well as rare-earth light emitters. Detection of light in silicon photonics is performed via the integration of germanium and other elements into detector structures, which can also be achieved by ion implantation. Novel techniques to grow SiGe- and SiGeSn-on-Si structure are described along with their application as detectors for operation in the short-wave infrared range.https://www.mdpi.com/2624-8174/4/2/25Si photonicsion beam implantationquantum dotsshort-wave infrared detectors |
| spellingShingle | Lyudmila V. Goncharova Peter J. Simpson Ion Beam Modification for Si Photonics Physics Si photonics ion beam implantation quantum dots short-wave infrared detectors |
| title | Ion Beam Modification for Si Photonics |
| title_full | Ion Beam Modification for Si Photonics |
| title_fullStr | Ion Beam Modification for Si Photonics |
| title_full_unstemmed | Ion Beam Modification for Si Photonics |
| title_short | Ion Beam Modification for Si Photonics |
| title_sort | ion beam modification for si photonics |
| topic | Si photonics ion beam implantation quantum dots short-wave infrared detectors |
| url | https://www.mdpi.com/2624-8174/4/2/25 |
| work_keys_str_mv | AT lyudmilavgoncharova ionbeammodificationforsiphotonics AT peterjsimpson ionbeammodificationforsiphotonics |