Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor
Proton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation ageing studies. However, developing new materials w...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/3/1089 |
| _version_ | 1797624023198203904 |
|---|---|
| author | Igor Neuhold Pavol Noga Stanislav Sojak Martin Petriska Jarmila Degmova Vladimir Slugen Vladimir Krsjak |
| author_facet | Igor Neuhold Pavol Noga Stanislav Sojak Martin Petriska Jarmila Degmova Vladimir Slugen Vladimir Krsjak |
| author_sort | Igor Neuhold |
| collection | DOAJ |
| description | Proton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation ageing studies. However, developing new materials with improved radiation stability requires numerous model materials, test samples, and very effective utilization of the accelerator beam time. Therefore, the question of optimal beam current, or particle flux, is critical and needs to be adequately understood. In this work, we used 5 MeV protons to introduce displacement damage in gallium arsenide samples using a wide range of flux values. Positron annihilation lifetime spectroscopy was used to quantitatively assess the concentration of radiation-induced survived vacancies. The results show that proton fluxes in range between 10<sup>11</sup> and 10<sup>12</sup> cm<sup>−2</sup>.s<sup>−1</sup> lead to a similar concentration of monovacancies generated in the GaAs semiconductor material, while a further increase in the flux leads to a sharp drop in this concentration. |
| first_indexed | 2024-03-11T09:37:01Z |
| format | Article |
| id | doaj.art-f55207af9c6d4e7b9c57165c743d6ed7 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T09:37:01Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-f55207af9c6d4e7b9c57165c743d6ed72023-11-16T17:16:59ZengMDPI AGMaterials1996-19442023-01-01163108910.3390/ma16031089Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs SemiconductorIgor Neuhold0Pavol Noga1Stanislav Sojak2Martin Petriska3Jarmila Degmova4Vladimir Slugen5Vladimir Krsjak6Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaAdvanced Technologies Research Institute, Faculty of Materials Science and Technology, Slovak University of Technology in Bratislava, Jana Bottu 25, 91724 Trnava, SlovakiaInstitute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaInstitute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaInstitute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaInstitute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaInstitute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 81219 Bratislava, SlovakiaProton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation ageing studies. However, developing new materials with improved radiation stability requires numerous model materials, test samples, and very effective utilization of the accelerator beam time. Therefore, the question of optimal beam current, or particle flux, is critical and needs to be adequately understood. In this work, we used 5 MeV protons to introduce displacement damage in gallium arsenide samples using a wide range of flux values. Positron annihilation lifetime spectroscopy was used to quantitatively assess the concentration of radiation-induced survived vacancies. The results show that proton fluxes in range between 10<sup>11</sup> and 10<sup>12</sup> cm<sup>−2</sup>.s<sup>−1</sup> lead to a similar concentration of monovacancies generated in the GaAs semiconductor material, while a further increase in the flux leads to a sharp drop in this concentration.https://www.mdpi.com/1996-1944/16/3/1089semiconductorsWBGproton irradiationageinggallium arsenidepositron annihilation spectroscopy |
| spellingShingle | Igor Neuhold Pavol Noga Stanislav Sojak Martin Petriska Jarmila Degmova Vladimir Slugen Vladimir Krsjak Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor Materials semiconductors WBG proton irradiation ageing gallium arsenide positron annihilation spectroscopy |
| title | Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor |
| title_full | Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor |
| title_fullStr | Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor |
| title_full_unstemmed | Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor |
| title_short | Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor |
| title_sort | application of proton irradiation in the study of accelerated radiation ageing in a gaas semiconductor |
| topic | semiconductors WBG proton irradiation ageing gallium arsenide positron annihilation spectroscopy |
| url | https://www.mdpi.com/1996-1944/16/3/1089 |
| work_keys_str_mv | AT igorneuhold applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT pavolnoga applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT stanislavsojak applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT martinpetriska applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT jarmiladegmova applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT vladimirslugen applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor AT vladimirkrsjak applicationofprotonirradiationinthestudyofacceleratedradiationageinginagaassemiconductor |