Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals. However, this technique does not separate the s...

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Hlavní autoři: Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Médium: Článek
Jazyk:English
Vydáno: IEEE 2020-01-01
Edice:IEEE Access
Témata:
Channel current
current diversion phenomenon
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efficiency
power losses
power MOSFET
On-line přístup:https://ieeexplore.ieee.org/document/9220878/

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https://ieeexplore.ieee.org/document/9220878/

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