Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals. However, this technique does not separate the s...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy: Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Format: Artykuł
Język:English
Wydane: IEEE 2020-01-01
Seria:IEEE Access
Hasła przedmiotowe:
Channel current
current diversion phenomenon
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">COSS</italic> losses
efficiency
power losses
power MOSFET
Dostęp online:https://ieeexplore.ieee.org/document/9220878/

Internet

https://ieeexplore.ieee.org/document/9220878/

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