InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5054292 |
| _version_ | 1811242931512672256 |
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| author | Andrea Troian Johan V. Knutsson Sarah R. McKibbin Sofie Yngman Aein S. Babadi Lars-Erik Wernersson Anders Mikkelsen Rainer Timm |
| author_facet | Andrea Troian Johan V. Knutsson Sarah R. McKibbin Sofie Yngman Aein S. Babadi Lars-Erik Wernersson Anders Mikkelsen Rainer Timm |
| author_sort | Andrea Troian |
| collection | DOAJ |
| description | Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via annealing in ultra-high vacuum (UHV) under a flux of atomic hydrogen and growing a stoichiometry controlled oxide (thermal oxide) in UHV, prior to atomic layer deposition (ALD) of an Al2O3 high-k layer. The semiconductor-oxide interfacial stoichiometry and surface morphology are investigated by synchrotron based X-ray photoemission spectroscopy, scanning tunneling microscopy, and low energy electron diffraction. After thermal oxide growth, we find a thin non-crystalline layer with a flat surface structure. Importantly, the InAs-oxide interface shows a significantly decreased amount of In3+, As5+, and As0 components, which can be correlated to electrically detrimental defects. Capacitance-voltage measurements confirm a decrease of the interface trap density in gate stacks including the thermal oxide as compared to reference samples. This makes the concept of a thermal oxide layer prior to ALD promising for improving device performance if this thermal oxide layer can be stabilized upon exposure to ambient air. |
| first_indexed | 2024-04-12T13:59:13Z |
| format | Article |
| id | doaj.art-f5826e7ec9214ecaab1bc10e1d49d575 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T13:59:13Z |
| publishDate | 2018-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f5826e7ec9214ecaab1bc10e1d49d5752022-12-22T03:30:17ZengAIP Publishing LLCAIP Advances2158-32262018-12-01812125227125227-810.1063/1.5054292107812ADVInAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer depositionAndrea Troian0Johan V. Knutsson1Sarah R. McKibbin2Sofie Yngman3Aein S. Babadi4Lars-Erik Wernersson5Anders Mikkelsen6Rainer Timm7Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenSynchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenSynchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenSynchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenDepartment of Electrical and Information Technology, Lund University, Box 118, 22100 Lund, SwedenDepartment of Electrical and Information Technology, Lund University, Box 118, 22100 Lund, SwedenSynchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenSynchrotron Radiation Research and NanoLund, Department of Physics, Lund University, 22100 Lund, SwedenDefects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via annealing in ultra-high vacuum (UHV) under a flux of atomic hydrogen and growing a stoichiometry controlled oxide (thermal oxide) in UHV, prior to atomic layer deposition (ALD) of an Al2O3 high-k layer. The semiconductor-oxide interfacial stoichiometry and surface morphology are investigated by synchrotron based X-ray photoemission spectroscopy, scanning tunneling microscopy, and low energy electron diffraction. After thermal oxide growth, we find a thin non-crystalline layer with a flat surface structure. Importantly, the InAs-oxide interface shows a significantly decreased amount of In3+, As5+, and As0 components, which can be correlated to electrically detrimental defects. Capacitance-voltage measurements confirm a decrease of the interface trap density in gate stacks including the thermal oxide as compared to reference samples. This makes the concept of a thermal oxide layer prior to ALD promising for improving device performance if this thermal oxide layer can be stabilized upon exposure to ambient air.http://dx.doi.org/10.1063/1.5054292 |
| spellingShingle | Andrea Troian Johan V. Knutsson Sarah R. McKibbin Sofie Yngman Aein S. Babadi Lars-Erik Wernersson Anders Mikkelsen Rainer Timm InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition AIP Advances |
| title | InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition |
| title_full | InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition |
| title_fullStr | InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition |
| title_full_unstemmed | InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition |
| title_short | InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition |
| title_sort | inas oxide interface composition and stability upon thermal oxidation and high k atomic layer deposition |
| url | http://dx.doi.org/10.1063/1.5054292 |
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