InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-12-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5054292 |