Observation of negative capacitance in antiferroelectric PbZrO3 Films

The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin...

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Main Authors: Leilei Qiao, Cheng Song, Yiming Sun, Muhammad Umer Fayaz, Tianqi Lu, Siqi Yin, Chong Chen, Huiping Xu, Tian-Ling Ren, Feng Pan
Format: Article
Language:English
Published: Nature Portfolio 2021-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-021-24530-w
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author Leilei Qiao
Cheng Song
Yiming Sun
Muhammad Umer Fayaz
Tianqi Lu
Siqi Yin
Chong Chen
Huiping Xu
Tian-Ling Ren
Feng Pan
author_facet Leilei Qiao
Cheng Song
Yiming Sun
Muhammad Umer Fayaz
Tianqi Lu
Siqi Yin
Chong Chen
Huiping Xu
Tian-Ling Ren
Feng Pan
author_sort Leilei Qiao
collection DOAJ
description The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin.
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spelling doaj.art-f5daf3e56731454a9f67f91dbbc3b5f02022-12-21T21:20:42ZengNature PortfolioNature Communications2041-17232021-07-011211910.1038/s41467-021-24530-wObservation of negative capacitance in antiferroelectric PbZrO3 FilmsLeilei Qiao0Cheng Song1Yiming Sun2Muhammad Umer Fayaz3Tianqi Lu4Siqi Yin5Chong Chen6Huiping Xu7Tian-Ling Ren8Feng Pan9Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityInstitute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityInstitute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityThe observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin.https://doi.org/10.1038/s41467-021-24530-w
spellingShingle Leilei Qiao
Cheng Song
Yiming Sun
Muhammad Umer Fayaz
Tianqi Lu
Siqi Yin
Chong Chen
Huiping Xu
Tian-Ling Ren
Feng Pan
Observation of negative capacitance in antiferroelectric PbZrO3 Films
Nature Communications
title Observation of negative capacitance in antiferroelectric PbZrO3 Films
title_full Observation of negative capacitance in antiferroelectric PbZrO3 Films
title_fullStr Observation of negative capacitance in antiferroelectric PbZrO3 Films
title_full_unstemmed Observation of negative capacitance in antiferroelectric PbZrO3 Films
title_short Observation of negative capacitance in antiferroelectric PbZrO3 Films
title_sort observation of negative capacitance in antiferroelectric pbzro3 films
url https://doi.org/10.1038/s41467-021-24530-w
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