Observation of negative capacitance in antiferroelectric PbZrO3 Films
The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin...
Main Authors: | , , , , , , , , , |
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Language: | English |
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Nature Portfolio
2021-07-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-021-24530-w |
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author | Leilei Qiao Cheng Song Yiming Sun Muhammad Umer Fayaz Tianqi Lu Siqi Yin Chong Chen Huiping Xu Tian-Ling Ren Feng Pan |
author_facet | Leilei Qiao Cheng Song Yiming Sun Muhammad Umer Fayaz Tianqi Lu Siqi Yin Chong Chen Huiping Xu Tian-Ling Ren Feng Pan |
author_sort | Leilei Qiao |
collection | DOAJ |
description | The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin. |
first_indexed | 2024-12-18T04:42:16Z |
format | Article |
id | doaj.art-f5daf3e56731454a9f67f91dbbc3b5f0 |
institution | Directory Open Access Journal |
issn | 2041-1723 |
language | English |
last_indexed | 2024-12-18T04:42:16Z |
publishDate | 2021-07-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Nature Communications |
spelling | doaj.art-f5daf3e56731454a9f67f91dbbc3b5f02022-12-21T21:20:42ZengNature PortfolioNature Communications2041-17232021-07-011211910.1038/s41467-021-24530-wObservation of negative capacitance in antiferroelectric PbZrO3 FilmsLeilei Qiao0Cheng Song1Yiming Sun2Muhammad Umer Fayaz3Tianqi Lu4Siqi Yin5Chong Chen6Huiping Xu7Tian-Ling Ren8Feng Pan9Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityInstitute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityInstitute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua UniversityThe observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin.https://doi.org/10.1038/s41467-021-24530-w |
spellingShingle | Leilei Qiao Cheng Song Yiming Sun Muhammad Umer Fayaz Tianqi Lu Siqi Yin Chong Chen Huiping Xu Tian-Ling Ren Feng Pan Observation of negative capacitance in antiferroelectric PbZrO3 Films Nature Communications |
title | Observation of negative capacitance in antiferroelectric PbZrO3 Films |
title_full | Observation of negative capacitance in antiferroelectric PbZrO3 Films |
title_fullStr | Observation of negative capacitance in antiferroelectric PbZrO3 Films |
title_full_unstemmed | Observation of negative capacitance in antiferroelectric PbZrO3 Films |
title_short | Observation of negative capacitance in antiferroelectric PbZrO3 Films |
title_sort | observation of negative capacitance in antiferroelectric pbzro3 films |
url | https://doi.org/10.1038/s41467-021-24530-w |
work_keys_str_mv | AT leileiqiao observationofnegativecapacitanceinantiferroelectricpbzro3films AT chengsong observationofnegativecapacitanceinantiferroelectricpbzro3films AT yimingsun observationofnegativecapacitanceinantiferroelectricpbzro3films AT muhammadumerfayaz observationofnegativecapacitanceinantiferroelectricpbzro3films AT tianqilu observationofnegativecapacitanceinantiferroelectricpbzro3films AT siqiyin observationofnegativecapacitanceinantiferroelectricpbzro3films AT chongchen observationofnegativecapacitanceinantiferroelectricpbzro3films AT huipingxu observationofnegativecapacitanceinantiferroelectricpbzro3films AT tianlingren observationofnegativecapacitanceinantiferroelectricpbzro3films AT fengpan observationofnegativecapacitanceinantiferroelectricpbzro3films |