Tunneling magnetoresistance sensors with different coupled free layers

Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interf...

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Main Authors: Yen-Fu Liu, Xiaolu Yin, Yi Yang, Dan Ewing, Paul J. De Rego, Sy-Hwang Liou
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4977774
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author Yen-Fu Liu
Xiaolu Yin
Yi Yang
Dan Ewing
Paul J. De Rego
Sy-Hwang Liou
author_facet Yen-Fu Liu
Xiaolu Yin
Yi Yang
Dan Ewing
Paul J. De Rego
Sy-Hwang Liou
author_sort Yen-Fu Liu
collection DOAJ
description Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.
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spelling doaj.art-f5e6a2095adf433a9d3f5d7fc50491282022-12-21T20:33:01ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056666056666-610.1063/1.4977774299791ADVTunneling magnetoresistance sensors with different coupled free layersYen-Fu Liu0Xiaolu Yin1Yi Yang2Dan Ewing3Paul J. De Rego4Sy-Hwang Liou5Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Energy’s National Security Campus, Kansas City, Missouri 64147, USADepartment of Energy’s National Security Campus, Albuquerque, New Mexico 87106, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USALarge differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.http://dx.doi.org/10.1063/1.4977774
spellingShingle Yen-Fu Liu
Xiaolu Yin
Yi Yang
Dan Ewing
Paul J. De Rego
Sy-Hwang Liou
Tunneling magnetoresistance sensors with different coupled free layers
AIP Advances
title Tunneling magnetoresistance sensors with different coupled free layers
title_full Tunneling magnetoresistance sensors with different coupled free layers
title_fullStr Tunneling magnetoresistance sensors with different coupled free layers
title_full_unstemmed Tunneling magnetoresistance sensors with different coupled free layers
title_short Tunneling magnetoresistance sensors with different coupled free layers
title_sort tunneling magnetoresistance sensors with different coupled free layers
url http://dx.doi.org/10.1063/1.4977774
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AT xiaoluyin tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers
AT yiyang tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers
AT danewing tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers
AT pauljderego tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers
AT syhwangliou tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers