Tunneling magnetoresistance sensors with different coupled free layers
Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interf...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2017-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4977774 |
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author | Yen-Fu Liu Xiaolu Yin Yi Yang Dan Ewing Paul J. De Rego Sy-Hwang Liou |
author_facet | Yen-Fu Liu Xiaolu Yin Yi Yang Dan Ewing Paul J. De Rego Sy-Hwang Liou |
author_sort | Yen-Fu Liu |
collection | DOAJ |
description | Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers. |
first_indexed | 2024-12-19T06:11:11Z |
format | Article |
id | doaj.art-f5e6a2095adf433a9d3f5d7fc5049128 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-19T06:11:11Z |
publishDate | 2017-05-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-f5e6a2095adf433a9d3f5d7fc50491282022-12-21T20:33:01ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056666056666-610.1063/1.4977774299791ADVTunneling magnetoresistance sensors with different coupled free layersYen-Fu Liu0Xiaolu Yin1Yi Yang2Dan Ewing3Paul J. De Rego4Sy-Hwang Liou5Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USADepartment of Energy’s National Security Campus, Kansas City, Missouri 64147, USADepartment of Energy’s National Security Campus, Albuquerque, New Mexico 87106, USADepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USALarge differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.http://dx.doi.org/10.1063/1.4977774 |
spellingShingle | Yen-Fu Liu Xiaolu Yin Yi Yang Dan Ewing Paul J. De Rego Sy-Hwang Liou Tunneling magnetoresistance sensors with different coupled free layers AIP Advances |
title | Tunneling magnetoresistance sensors with different coupled free layers |
title_full | Tunneling magnetoresistance sensors with different coupled free layers |
title_fullStr | Tunneling magnetoresistance sensors with different coupled free layers |
title_full_unstemmed | Tunneling magnetoresistance sensors with different coupled free layers |
title_short | Tunneling magnetoresistance sensors with different coupled free layers |
title_sort | tunneling magnetoresistance sensors with different coupled free layers |
url | http://dx.doi.org/10.1063/1.4977774 |
work_keys_str_mv | AT yenfuliu tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers AT xiaoluyin tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers AT yiyang tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers AT danewing tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers AT pauljderego tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers AT syhwangliou tunnelingmagnetoresistancesensorswithdifferentcoupledfreelayers |