Black-Si as a Photoelectrode
The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO<sub>2</sub> using atomic layer deposition (ALD...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/5/873 |
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| author | Denver P. Linklater Fatima Haydous Cheng Xi Daniele Pergolesi Jingwen Hu Elena P. Ivanova Saulius Juodkazis Thomas Lippert Jurga Juodkazytė |
| author_facet | Denver P. Linklater Fatima Haydous Cheng Xi Daniele Pergolesi Jingwen Hu Elena P. Ivanova Saulius Juodkazis Thomas Lippert Jurga Juodkazytė |
| author_sort | Denver P. Linklater |
| collection | DOAJ |
| description | The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO<sub>2</sub> using atomic layer deposition (ALD) with a top layer of CoO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mi>x</mi> </msub> </semantics> </math> </inline-formula> cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity <inline-formula> <math display="inline"> <semantics> <mrow> <mi>R</mi> <mo><</mo> <mn>5</mn> <mo>%</mo> </mrow> </semantics> </math> </inline-formula> of b-Si over the entire visible and near-IR (<inline-formula> <math display="inline"> <semantics> <mrow> <mi>λ</mi> <mo><</mo> <mn>2</mn> <mtext> </mtext> <mi mathvariant="sans-serif">μ</mi> </mrow> </semantics> </math> </inline-formula>m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO<sub>2</sub>. |
| first_indexed | 2024-03-10T20:07:01Z |
| format | Article |
| id | doaj.art-f5f37a5d9f904ea1ae087d739f7cc3bd |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T20:07:01Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-f5f37a5d9f904ea1ae087d739f7cc3bd2023-11-19T23:13:14ZengMDPI AGNanomaterials2079-49912020-05-0110587310.3390/nano10050873Black-Si as a PhotoelectrodeDenver P. Linklater0Fatima Haydous1Cheng Xi2Daniele Pergolesi3Jingwen Hu4Elena P. Ivanova5Saulius Juodkazis6Thomas Lippert7Jurga Juodkazytė8School of Science, RMIT University, Melbourne, VIC 3000, AustraliaLaboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, SwitzerlandLaboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, SwitzerlandLaboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, SwitzerlandOptical Sciences Centre and ARC Training Centre in Surface Engineering for Advanced Materials (SEAM), School of Science, Swinburne University of Technology, Hawthorn, VIC 3122, AustraliaSchool of Science, RMIT University, Melbourne, VIC 3000, AustraliaOptical Sciences Centre and ARC Training Centre in Surface Engineering for Advanced Materials (SEAM), School of Science, Swinburne University of Technology, Hawthorn, VIC 3122, AustraliaLaboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, SwitzerlandCenter for Physical Sciences and Technology, Saulėtekio ave. 3, LT-10257 Vilnius, LithuaniaThe fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO<sub>2</sub> using atomic layer deposition (ALD) with a top layer of CoO<inline-formula> <math display="inline"> <semantics> <msub> <mrow></mrow> <mi>x</mi> </msub> </semantics> </math> </inline-formula> cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity <inline-formula> <math display="inline"> <semantics> <mrow> <mi>R</mi> <mo><</mo> <mn>5</mn> <mo>%</mo> </mrow> </semantics> </math> </inline-formula> of b-Si over the entire visible and near-IR (<inline-formula> <math display="inline"> <semantics> <mrow> <mi>λ</mi> <mo><</mo> <mn>2</mn> <mtext> </mtext> <mi mathvariant="sans-serif">μ</mi> </mrow> </semantics> </math> </inline-formula>m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO<sub>2</sub>.https://www.mdpi.com/2079-4991/10/5/873black-Siantireflectionphotoanodewater splitting |
| spellingShingle | Denver P. Linklater Fatima Haydous Cheng Xi Daniele Pergolesi Jingwen Hu Elena P. Ivanova Saulius Juodkazis Thomas Lippert Jurga Juodkazytė Black-Si as a Photoelectrode Nanomaterials black-Si antireflection photoanode water splitting |
| title | Black-Si as a Photoelectrode |
| title_full | Black-Si as a Photoelectrode |
| title_fullStr | Black-Si as a Photoelectrode |
| title_full_unstemmed | Black-Si as a Photoelectrode |
| title_short | Black-Si as a Photoelectrode |
| title_sort | black si as a photoelectrode |
| topic | black-Si antireflection photoanode water splitting |
| url | https://www.mdpi.com/2079-4991/10/5/873 |
| work_keys_str_mv | AT denverplinklater blacksiasaphotoelectrode AT fatimahaydous blacksiasaphotoelectrode AT chengxi blacksiasaphotoelectrode AT danielepergolesi blacksiasaphotoelectrode AT jingwenhu blacksiasaphotoelectrode AT elenapivanova blacksiasaphotoelectrode AT sauliusjuodkazis blacksiasaphotoelectrode AT thomaslippert blacksiasaphotoelectrode AT jurgajuodkazyte blacksiasaphotoelectrode |