Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors
This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domai...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-02-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/18/3/707 |
| _version_ | 1811262761037987840 |
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| author | Xiaoliang Ge Albert J. P. Theuwissen |
| author_facet | Xiaoliang Ge Albert J. P. Theuwissen |
| author_sort | Xiaoliang Ge |
| collection | DOAJ |
| description | This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. |
| first_indexed | 2024-04-12T19:32:32Z |
| format | Article |
| id | doaj.art-f5f3803942f54d17b1369ffb49f47c2c |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-12T19:32:32Z |
| publishDate | 2018-02-01 |
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| series | Sensors |
| spelling | doaj.art-f5f3803942f54d17b1369ffb49f47c2c2022-12-22T03:19:19ZengMDPI AGSensors1424-82202018-02-0118370710.3390/s18030707s18030707Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image SensorsXiaoliang Ge0Albert J. P. Theuwissen1Electronic Instrumentation Laboratory, Delft University of Technology, 2628 CD Delft, The NetherlandsElectronic Instrumentation Laboratory, Delft University of Technology, 2628 CD Delft, The NetherlandsThis paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.http://www.mdpi.com/1424-8220/18/3/707charge-domain samplingCMOS image sensorlow noisenon-steady-state signal analysisdynamic rangepixel-level amplification |
| spellingShingle | Xiaoliang Ge Albert J. P. Theuwissen Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors Sensors charge-domain sampling CMOS image sensor low noise non-steady-state signal analysis dynamic range pixel-level amplification |
| title | Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors |
| title_full | Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors |
| title_fullStr | Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors |
| title_full_unstemmed | Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors |
| title_short | Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors |
| title_sort | temporal noise analysis of charge domain sampling readout circuits for cmos image sensors |
| topic | charge-domain sampling CMOS image sensor low noise non-steady-state signal analysis dynamic range pixel-level amplification |
| url | http://www.mdpi.com/1424-8220/18/3/707 |
| work_keys_str_mv | AT xiaoliangge temporalnoiseanalysisofchargedomainsamplingreadoutcircuitsforcmosimagesensors AT albertjptheuwissen temporalnoiseanalysisofchargedomainsamplingreadoutcircuitsforcmosimagesensors |