Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-04-01
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| Series: | Applied Sciences |
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| Online Access: | http://www.mdpi.com/2076-3417/8/5/670 |
| _version_ | 1817985126482575360 |
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| author | Keyvan Narimani Stefan Trellenkamp Andreas Tiedemann Siegfried Mantl Qing-Tai Zhao |
| author_facet | Keyvan Narimani Stefan Trellenkamp Andreas Tiedemann Siegfried Mantl Qing-Tai Zhao |
| author_sort | Keyvan Narimani |
| collection | DOAJ |
| description | In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance. |
| first_indexed | 2024-04-13T23:53:08Z |
| format | Article |
| id | doaj.art-f61069d4295549c09c30f8e82b61ad39 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-04-13T23:53:08Z |
| publishDate | 2018-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-f61069d4295549c09c30f8e82b61ad392022-12-22T02:24:01ZengMDPI AGApplied Sciences2076-34172018-04-018567010.3390/app8050670app8050670Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling JunctionsKeyvan Narimani0Stefan Trellenkamp1Andreas Tiedemann2Siegfried Mantl3Qing-Tai Zhao4Peter-Grünberg-Institute (PGI 9), JARA-Fundamentals for Future Technology, Forschungszentrum Jülich, 52428 Jülich, GermanyHNF, Forschungszentrum Jülich, 52428 Jülich, GermanyPeter-Grünberg-Institute (PGI 9), JARA-Fundamentals for Future Technology, Forschungszentrum Jülich, 52428 Jülich, GermanyPeter-Grünberg-Institute (PGI 9), JARA-Fundamentals for Future Technology, Forschungszentrum Jülich, 52428 Jülich, GermanyPeter-Grünberg-Institute (PGI 9), JARA-Fundamentals for Future Technology, Forschungszentrum Jülich, 52428 Jülich, GermanyIn this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance.http://www.mdpi.com/2076-3417/8/5/670tunnel field effect transistor (TFET)band-to-band tunneling (BTBT)trap-assisted tunneling (TAT)gate-all-around (GAA) nanowires (NWs) |
| spellingShingle | Keyvan Narimani Stefan Trellenkamp Andreas Tiedemann Siegfried Mantl Qing-Tai Zhao Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions Applied Sciences tunnel field effect transistor (TFET) band-to-band tunneling (BTBT) trap-assisted tunneling (TAT) gate-all-around (GAA) nanowires (NWs) |
| title | Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions |
| title_full | Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions |
| title_fullStr | Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions |
| title_full_unstemmed | Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions |
| title_short | Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions |
| title_sort | strained silicon single nanowire gate all around tfets with optimized tunneling junctions |
| topic | tunnel field effect transistor (TFET) band-to-band tunneling (BTBT) trap-assisted tunneling (TAT) gate-all-around (GAA) nanowires (NWs) |
| url | http://www.mdpi.com/2076-3417/8/5/670 |
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