Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an...

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Bibliographic Details
Main Authors: Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao
Format: Article
Language:English
Published: MDPI AG 2018-04-01
Series:Applied Sciences
Subjects:
tunnel field effect transistor (TFET)
band-to-band tunneling (BTBT)
trap-assisted tunneling (TAT)
gate-all-around (GAA) nanowires (NWs)
Online Access:http://www.mdpi.com/2076-3417/8/5/670

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