Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
<p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated a...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2019-07-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3832 |
| _version_ | 1811270522169720832 |
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| author | S. Solodin Ye. Nikoniuk G. Rarenko P. Fochuk |
| author_facet | S. Solodin Ye. Nikoniuk G. Rarenko P. Fochuk |
| author_sort | S. Solodin |
| collection | DOAJ |
| description | <p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (ε<sub>A</sub>) was increased with the content Mn (x) according to the relation ε<sub>A</sub> = 0.6 (1 + 2х) eV. At 300 K: ρ = (10<sup>8</sup>-10<sup>9</sup>) (Ohm´cm), R<sub>H</sub> = (5×10<sup>9</sup>-5×10<sup>10</sup>) cm<sup>3</sup>/C; mobility of current carriers ~ 50 cm<sup>2</sup>/(V´s).</p> |
| first_indexed | 2024-04-12T22:03:27Z |
| format | Article |
| id | doaj.art-f6270d5335184e059c241eecb05dff30 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-12T22:03:27Z |
| publishDate | 2019-07-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-f6270d5335184e059c241eecb05dff302022-12-22T03:15:03ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892019-07-0120214414810.15330/pcss.20.2.144-1483213Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystalsS. Solodin0Ye. Nikoniuk1G. Rarenko2P. Fochuk3Чернівецький національний університет ім. Юрія ФедьковичаNational University of Water Management and Nature ResourcesЧернівецький національний університет ім. Юрія ФедьковичаЧернівецький національний університет ім. Юрія Федьковича<p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (ε<sub>A</sub>) was increased with the content Mn (x) according to the relation ε<sub>A</sub> = 0.6 (1 + 2х) eV. At 300 K: ρ = (10<sup>8</sup>-10<sup>9</sup>) (Ohm´cm), R<sub>H</sub> = (5×10<sup>9</sup>-5×10<sup>10</sup>) cm<sup>3</sup>/C; mobility of current carriers ~ 50 cm<sup>2</sup>/(V´s).</p>http://journals.pu.if.ua/index.php/pcss/article/view/3832cd1-xmnxteтверді розчиниелектричні властивостіефект холлагерманій |
| spellingShingle | S. Solodin Ye. Nikoniuk G. Rarenko P. Fochuk Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals Фізика і хімія твердого тіла cd1-xmnxte тверді розчини електричні властивості ефект холла германій |
| title | Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals |
| title_full | Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals |
| title_fullStr | Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals |
| title_full_unstemmed | Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals |
| title_short | Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals |
| title_sort | electro physical properties of ge doped cd1 xmnxte x 0 1 crystals |
| topic | cd1-xmnxte тверді розчини електричні властивості ефект холла германій |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/3832 |
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