ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE
ABSTRACT: This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IIUM Press, International Islamic University Malaysia
2018-12-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Subjects: | |
| Online Access: | https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/794 |