Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D _n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P _4 V clusters in heavily phosphorus-doped Ge epilayers can be achieved by m...

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Bibliographic Details
Main Authors: Slawomir Prucnal, Maciej O Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napolitani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:New Journal of Physics
Subjects:
germanium
vacancies
doping
positron annihilation lifetime spectroscopy
flash lamp annealing
Online Access:https://doi.org/10.1088/1367-2630/abc466

Internet

https://doi.org/10.1088/1367-2630/abc466

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