Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay betwe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3591397 |
| _version_ | 1819054510666940416 |
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| author | M. Ciorga C. Wolf A. Einwanger M. Utz D. Schuh D. Weiss |
| author_facet | M. Ciorga C. Wolf A. Einwanger M. Utz D. Schuh D. Weiss |
| author_sort | M. Ciorga |
| collection | DOAJ |
| description | We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal. |
| first_indexed | 2024-12-21T12:52:46Z |
| format | Article |
| id | doaj.art-f64df0678d424d00a4e3d6754d3095d9 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T12:52:46Z |
| publishDate | 2011-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f64df0678d424d00a4e3d6754d3095d92022-12-21T19:03:26ZengAIP Publishing LLCAIP Advances2158-32262011-06-0112022113022113-610.1063/1.3591397013102ADVLocal spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devicesM. Ciorga0C. Wolf1A. Einwanger2M. Utz3D. Schuh4D. Weiss5Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.http://dx.doi.org/10.1063/1.3591397 |
| spellingShingle | M. Ciorga C. Wolf A. Einwanger M. Utz D. Schuh D. Weiss Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices AIP Advances |
| title | Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices |
| title_full | Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices |
| title_fullStr | Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices |
| title_full_unstemmed | Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices |
| title_short | Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices |
| title_sort | local spin valve effect in lateral ga mn as gaas spin esaki diode devices |
| url | http://dx.doi.org/10.1063/1.3591397 |
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