Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been dev...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-11-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/13/22/5174 |
| _version_ | 1797547730195709952 |
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| author | Joachim Piprek |
| author_facet | Joachim Piprek |
| author_sort | Joachim Piprek |
| collection | DOAJ |
| description | Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. |
| first_indexed | 2024-03-10T14:48:17Z |
| format | Article |
| id | doaj.art-f653912427f740ad9e9838b25c9bd3d8 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T14:48:17Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-f653912427f740ad9e9838b25c9bd3d82023-11-20T21:12:00ZengMDPI AGMaterials1996-19442020-11-011322517410.3390/ma13225174Efficiency Models for GaN-Based Light-Emitting Diodes: Status and ChallengesJoachim Piprek0NUSOD Institute LLC, Newark, DE 19714-7204, USALight-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.https://www.mdpi.com/1996-1944/13/22/5174InGaN/GaNlight-emitting diodeefficiency droopdrift-diffusionleakageAuger recombination |
| spellingShingle | Joachim Piprek Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges Materials InGaN/GaN light-emitting diode efficiency droop drift-diffusion leakage Auger recombination |
| title | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
| title_full | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
| title_fullStr | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
| title_full_unstemmed | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
| title_short | Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges |
| title_sort | efficiency models for gan based light emitting diodes status and challenges |
| topic | InGaN/GaN light-emitting diode efficiency droop drift-diffusion leakage Auger recombination |
| url | https://www.mdpi.com/1996-1944/13/22/5174 |
| work_keys_str_mv | AT joachimpiprek efficiencymodelsforganbasedlightemittingdiodesstatusandchallenges |