Enhancing room-temperature gas sensing performance of metal oxide semiconductor chemiresistors through 400 nm UV photoexcitation
One of the most significant drawbacks of metal oxide (MOS) based chemiresistive gas sensors is the requirement of high operating temperature (250–450 °C), which results in significant power consumption and shorter lifetime. To develop room temperature (21±2 °C) MOS chemiresistive gas sensors, the se...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-06-01
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| Series: | Sensors and Actuators Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666053924000109 |